2N3879SMD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3879SMD  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 35 W

Tensión colector-emisor (Vce): 75 V

Corriente del colector DC máxima (Ic): 7 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 40 MHz

Ganancia de corriente contínua (hFE): 12

Encapsulados: TO276AB

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2N3879SMD datasheet

 ..1. Size:10K  semelab
 2n3879smd.pdf pdf_icon

2N3879SMD

2N3879SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 75V IC = 7A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0

 0.1. Size:10K  semelab
 2n3879smd05.pdf pdf_icon

2N3879SMD

2N3879SMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 75V IC = 7A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab herm

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 2n3879.pdf pdf_icon

2N3879SMD

 8.2. Size:185K  inchange semiconductor
 2n3879.pdf pdf_icon

2N3879SMD

isc Silicon NPN Power Transistor 2N3879 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for high speed switching and linear- amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

MOSTRAR MÁS

Otros transistores... 2N3866UB, 2N3867S, 2N3867SMD05, 2N3867U4, 2N3868S, 2N3868SMD, 2N3868SMD05, 2N3868U4, C5198, 2N3879SMD05, 2N3902T1, 2N3902T3, 2N3904G, 2N3904N, 2N3904SC, 2N3904-T18, 2N3906G