2N3906SC Todos los transistores

SEMICONDUCTOR 2N3906SC TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Complementary to 2N3904SC. MAXIMUM RATING (Ta=25 ) CHARACTERIST

SEMICONDUCTOR 2N3906S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L DIM MILLIMETERS _ + FEATURES A 2.93 0.20 B 1.30+0.20/-0.15 Low Leakage Current C 1.30 MAX 2 3 D 0.40+0.15/-0.05 ICEX=-50nA(Max.), IBL=-50nA(Max.) E 2.40+0.30/-0.20 1 G 1.90 @VCE=-30V, VEB=-3V. H 0.95 Excellent DC Current Gain Linearity. J 0

SEMICONDUCTOR 2N3906S TECHNICAL DATA General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Marking Shipping 2 2N3906S 2A 3000/Tape & Reel 1 SOT 23 MAXIMUM RATINGS Rating Symbol Value Unit 3 Collector Emitter Voltage V 40 Vdc CEO COLLECTOR Collector Base Voltage V CBO 40

isc Silicon PNP Power Transistor 2N3906S DESCRIPTION Low voltage( max .40V ) Low current ( max .200mA ) APPLICATIONS Designed for high-speed switching Amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -40 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuo