2N3906SC . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR 2N3906SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURESLow Leakage Current: ICEX=-50nA(Max.), IBL=-50nA(Max.)@VCE=-30V, VEB=-3V.Excellent DC Current Gain Linearity.Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.Complementary to 2N3904SC.MAXIMUM RATING (Ta=25)CHARACTERIST

SEMICONDUCTOR 2N3906STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LDIM MILLIMETERS_+FEATURES A 2.93 0.20B 1.30+0.20/-0.15Low Leakage CurrentC 1.30 MAX23 D 0.40+0.15/-0.05: ICEX=-50nA(Max.), IBL=-50nA(Max.)E 2.40+0.30/-0.201G 1.90@VCE=-30V, VEB=-3V.H 0.95Excellent DC Current Gain Linearity.J 0

SEMICONDUCTOR2N3906STECHNICAL DATAGeneral Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.3ORDERING INFORMATIONDevice Marking Shipping22N3906S 2A 3000/Tape & Reel 1SOT23MAXIMUM RATINGSRating Symbol Value Unit3CollectorEmitter Voltage V 40 VdcCEOCOLLECTORCollectorBase Voltage V CBO 40

isc Silicon PNP Power Transistor 2N3906SDESCRIPTIONLow voltage( max .40V )Low current ( max .200mA )APPLICATIONSDesigned for high-speed switchingAmplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -40 VCBOV Collector-Emitter Voltage -40 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuo