2N3964DCSM Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3964DCSM

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-emisor (Vce): 45 V

Corriente del colector DC máxima (Ic): 0.2 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 40 MHz

Ganancia de corriente contínua (hFE): 250

Encapsulados: LCC2

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2N3964DCSM datasheet

 ..1. Size:10K  semelab
 2n3964dcsm.pdf pdf_icon

2N3964DCSM

2N3964DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 45V CEO 6.22 0.13 A = 1.27 0.13 I = 0.2A C (0.0

 9.1. Size:238K  rca
 2n396-a.pdf pdf_icon

2N3964DCSM

 9.2. Size:43K  microelectronics
 2n3962.pdf pdf_icon

2N3964DCSM

 9.3. Size:43K  semicoa
 2n3960.pdf pdf_icon

2N3964DCSM

Data Sheet No. 2N3960 Generic Part Number Type 2N3960 2N3960 Geometry 0003 Polarity NPN REF MIL-PRF-19500/399 Qual Level JAN - JANTXV Features General-purpose low-power NPN silicon transistor. Housed in TO-18 case. Also available in chip form using the 0003 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/399 which Semicoa meets in all cases.

MOSTRAR MÁS

Otros transistores... 2N3904G, 2N3904N, 2N3904SC, 2N3904-T18, 2N3906G, 2N3906-G, 2N3906N, 2N3906SC, 13009, 2N3996SMD, 2N3996SMD05, 2N3997SMD, 2N3997SMD05, 2N3998SMD, 2N3998SMD05, 2N3999SMD, 2N3999SMD05