2N3964DCSM Specs and Replacement
Type Designator: 2N3964DCSM
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Collector Current |Ic max|: 0.2 A
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN: 250
Package: LCC2
2N3964DCSM Substitution
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2N3964DCSM datasheet
2N3964DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 45V CEO 6.22 0.13 A = 1.27 0.13 I = 0.2A C (0.0... See More ⇒
Data Sheet No. 2N3960 Generic Part Number Type 2N3960 2N3960 Geometry 0003 Polarity NPN REF MIL-PRF-19500/399 Qual Level JAN - JANTXV Features General-purpose low-power NPN silicon transistor. Housed in TO-18 case. Also available in chip form using the 0003 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/399 which Semicoa meets in all cases.... See More ⇒
Detailed specifications: 2N3904G, 2N3904N, 2N3904SC, 2N3904-T18, 2N3906G, 2N3906-G, 2N3906N, 2N3906SC, 13009, 2N3996SMD, 2N3996SMD05, 2N3997SMD, 2N3997SMD05, 2N3998SMD, 2N3998SMD05, 2N3999SMD, 2N3999SMD05
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