2N4124G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N4124G

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.625 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 300 MHz

Capacitancia de salida (Cc): 8 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: TO92

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2N4124G datasheet

 ..1. Size:115K  onsemi
 2n4124g.pdf pdf_icon

2N4124G

2N4123, 2N4124 General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc 2N4123 30 2N4124 25 1 EMITTER Collector-Base Voltage VCBO Vdc 2N4123 40 2N4124 30 Emitter-Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 200 mAdc TO

 8.1. Size:162K  motorola
 2n4123 2n4124.pdf pdf_icon

2N4124G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4123/D General Purpose Transistors NPN Silicon 2N4123 2N4124 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol 2N4123 2N4124 Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 30 25 Vdc Collector Base Voltage VCBO 40 30 Vdc Emitter Base Voltage VEBO 5.0 Vdc Col

 8.2. Size:48K  philips
 2n4124 cnv 2.pdf pdf_icon

2N4124G

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4124 NPN general purpose transistor 1997 Mar 25 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistor 2N4124 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 25 V). 1

 8.3. Size:95K  fairchild semi
 2n4124 mmbt4124.pdf pdf_icon

2N4124G

2N4124 MMBT4124 C E TO-92 C B B SOT-23 E Mark ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Vo

MOSTRAR MÁS

Otros transistores... 2N3996SMD05, 2N3997SMD, 2N3997SMD05, 2N3998SMD, 2N3998SMD05, 2N3999SMD, 2N3999SMD05, 2N4033UB, BC327, 2N4150S, 2N4209C1A, 2N4209C1B, 2N4236X, 2N4261UBC, 2N4401G, 2N4401L, 2N4401SC