2N4124G
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N4124G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625
W
Maximum Collector-Base Voltage |Vcb|: 30
V
Maximum Collector-Emitter Voltage |Vce|: 25
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.2
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 300
MHz
Collector Capacitance (Cc): 8
pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package:
TO92
2N4124G
Transistor Equivalent Substitute - Cross-Reference Search
2N4124G
Datasheet (PDF)
..1. Size:115K onsemi
2n4124g.pdf 
2N4123, 2N4124General PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO Vdc2N4123 302N4124 251EMITTERCollector-Base Voltage VCBO Vdc2N4123 402N4124 30Emitter-Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 200 mAdcTO
8.1. Size:162K motorola
2n4123 2n4124.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4123/DGeneral Purpose TransistorsNPN Silicon2N41232N4124COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol 2N4123 2N4124 UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 30 25 VdcCollectorBase Voltage VCBO 40 30 VdcEmitterBase Voltage VEBO 5.0 VdcCol
8.2. Size:48K philips
2n4124 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N4124NPN general purpose transistor1997 Mar 25Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN general purpose transistor 2N4124FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 25 V).1
8.3. Size:95K fairchild semi
2n4124 mmbt4124.pdf
2N4124 MMBT4124CETO-92CB BSOT-23EMark: ZCNPN General Purpose AmplifierThis device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base Vo
8.4. Size:80K central
2n4123 2n4124 2n4125 2n4126.pdf
TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
8.5. Size:115K onsemi
2n4123 2n4124.pdf
2N4123, 2N4124General PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO Vdc2N4123 302N4124 251EMITTERCollector-Base Voltage VCBO Vdc2N4123 402N4124 30Emitter-Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 200 mAdcTO
8.6. Size:78K secos
2n4124.pdf
2N4124 0.2 A, 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High DC Current Gain High Transition FrequencyG H Emitter Base CollectorJA DB CollectorMillimeterREF.Min. Max.KA 4.40 4.70B 4.30 4.70C 12.70 -D 3.30 3.
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