2N4899X
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N4899X
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 4
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3
MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta:
TO-66
Búsqueda de reemplazo de transistor bipolar 2N4899X
2N4899X
Datasheet (PDF)
..1. Size:14K semelab
2n4899x.pdf 
2N4898X2N4899X2N4900XMECHANICAL DATADimensions in mm (inches)PNP EPITAXIAL BASEMEDIUM POWERTRANSISTOR6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.APPLICATIONSMedium power, low frequency PNPbipolar transistor in a hermeticallysealed TO66 metal package.1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.
8.1. Size:50K jmnic
2n4898 2n4899 2n4900.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFi
8.2. Size:126K inchange semiconductor
2n4898 2n4899 2n4900.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplifi
9.2. Size:11K semelab
2n4896.pdf
2N4896Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 60V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
9.3. Size:11K semelab
2n4895.pdf
2N4895Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 60V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
9.4. Size:10K semelab
2n4897x.pdf
2N4897XDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
9.5. Size:14K semelab
2n4898x.pdf
2N4898X2N4899X2N4900XMECHANICAL DATADimensions in mm (inches)PNP EPITAXIAL BASEMEDIUM POWERTRANSISTOR6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.APPLICATIONSMedium power, low frequency PNPbipolar transistor in a hermeticallysealed TO66 metal package.1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.
9.6. Size:11K semelab
2n4897.pdf
2N4897Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
