2N4918G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N4918G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 1
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3
MHz
Capacitancia de salida (Cc): 100
pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
TO-225
Búsqueda de reemplazo de transistor bipolar 2N4918G
2N4918G
Datasheet (PDF)
..1. Size:117K onsemi
2n4918g.pdf 
2N4918 - 2N4920* SeriesPreferred Device Medium-Power Plastic PNPSilicon TransistorsThese medium-power, high-performance plastic devices aredesigned for driver circuits, switching, and amplifier applications.http://onsemi.comFeatures Pb-Free Package is Available**3.0 A, 40-80 V, 30 W Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dis
8.1. Size:254K motorola
2n4918 2n4919 2n4920.pdf
Order this documentMOTOROLAby 2N4918/DSEMICONDUCTOR TECHNICAL DATA2N4918Medium-Power Plastic PNPthruSilicon Transistors*2N4920. . . designed for driver circuits, switching, and amplifier applications. Thesehighperformance plastic devices feature:*Motorola Preferred Device Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp3 AMPERE Excellent
8.3. Size:113K onsemi
2n4918 2n4919 2n4920.pdf
ON Semiconductor)2N4918Medium-Power Plastic PNPthruSilicon Transistors*2N4920. . . designed for driver circuits, switching, and amplifier*ON Semiconductor Preferred Deviceapplications. These highperformance plastic devices feature:3 AMPERE Low Saturation Voltage GENERALPURPOSEVCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 AmpPOWER TRANSISTORS4080 VOLTS Exc
8.4. Size:263K onsemi
2n4918 2n4919 2n4920 2n4920g.pdf
2N4918 - 2N4920 SeriesMedium-Power Plastic PNPSilicon TransistorsThese medium-power, high-performance plastic devices aredesigned for driver circuits, switching, and amplifier applications.http://onsemi.comFeatures Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dissipation, PD = 30 W @ TC = 25_C3.0 A, 40-80 V, 30 W Excellent Safe Oper
8.5. Size:41K jmnic
2n4918 2n4919 2n4920.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION With TO-126 package Complement to type 2N4921,2N4922 2N4923 Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to
8.6. Size:118K inchange semiconductor
2n4918 2n4919 2n4920.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION With TO-126 package Complement to type 2N4921/4922/4923 Excellent safe operating area Low collector saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2
8.7. Size:53K inchange semiconductor
2n4918.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N4918 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40V(Min) Low Collector Saturatioin Voltage- : VCE(sat)= -0.6V(Max.)@ IC= -1A Wide Area of Safe Operation Complement to Type 2N4921 APPLICATIONS Designed for driver circuits, switching and amplifier application
Otros transistores... 2N3192
, 2N3193
, 2N3194
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