2N4920G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N4920G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Capacitancia de salida (Cc): 100 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO-225
Búsqueda de reemplazo de transistor bipolar 2N4920G
2N4920G Datasheet (PDF)
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2N4918 - 2N4920* Series Preferred Device Medium-Power Plastic PNP Silicon Transistors These medium-power, high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. http //onsemi.com Features Pb-Free Package is Available** 3.0 A, 40-80 V, 30 W Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dis
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Order this document MOTOROLA by 2N4918/D SEMICONDUCTOR TECHNICAL DATA 2N4918 Medium-Power Plastic PNP thru Silicon Transistors * 2N4920 . . . designed for driver circuits, switching, and amplifier applications. These high performance plastic devices feature *Motorola Preferred Device Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp 3 AMPERE Excellent
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Otros transistores... 2N4900X , 2N4901SMD , 2N4910XSMD , 2N4910XSMD05 , 2N4911XSMD , 2N4911XSMD05 , 2N4918G , 2N4919G , C3198 , 2N4921G , 2N4922G , 2N4923G , 2N4928CSM , 2N4928DCSM , 2N4939DCSM , 2N5001SMD , 2N5010S .
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