2N4923G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2N4921, 2N4922, 2N49232N4923 is a Preferred DeviceMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.Featureshttp://onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction -PD = 30

2N4921G, 2N4922G,2N4923GMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.www.onsemi.comFeatures1.0 AMPERE Low Saturation VoltageGENERAL PURPOSE Excellent Power DissipationPOWER TRANSISTORS Excellent Safe Operating Area40-80 VOLTS, 30 WATTS Complement

Order this documentMOTOROLAby 2N4921/DSEMICONDUCTOR TECHNICAL DATA2N4921Medium-Power Plastic NPNthruSilicon Transistors2N4923*. . . designed for driver circuits, switching, and amplifier applications. Thesehighperformance plastic devices feature:*Motorola Preferred Device Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp1 AMPERE Excellent

2N4921, 2N4922, 2N49232N4923 is a Preferred DeviceMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.Featureshttp://onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction -PD = 30

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON EPITAXIAL TRANSISTOR 2N4923TO-126ECBGeneral Purpose Power TransistorABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)DESCRIPTION VALUE UNITCollector -Base Voltage VCBO 80 VCollector -Emitter Voltage VCEO 80 VEmitter Base Voltage VEBO 5.0 VCollector Current Continuous IC 3.0 ABas

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION With TO-126 package Complement to type 2N4918,2N4919 2N4920 Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION With TO-126 package Complement to type 2N4918/4919/4920 Excellent safe operating area Low collector saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2

isc Silicon NPN Power Transistor 2N4923DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = 0.6V(Max.)@ I = 1ACE(sat) CWide Area of Safe OperationComplement to Type 2N4920Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver circuits, switching