2N4923G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http //onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction - PD = 30

2N4921G, 2N4922G, 2N4923G Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. www.onsemi.com Features 1.0 AMPERE Low Saturation Voltage GENERAL PURPOSE Excellent Power Dissipation POWER TRANSISTORS Excellent Safe Operating Area 40-80 VOLTS, 30 WATTS Complement

Order this document MOTOROLA by 2N4921/D SEMICONDUCTOR TECHNICAL DATA 2N4921 Medium-Power Plastic NPN thru Silicon Transistors 2N4923 * . . . designed for driver circuits, switching, and amplifier applications. These high performance plastic devices feature *Motorola Preferred Device Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp 1 AMPERE Excellent

2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http //onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction - PD = 30

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR 2N4923 TO-126 E C B General Purpose Power Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C) DESCRIPTION VALUE UNIT Collector -Base Voltage VCBO 80 V Collector -Emitter Voltage VCEO 80 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 3.0 A Bas

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION With TO-126 package Complement to type 2N4918,2N4919 2N4920 Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION With TO-126 package Complement to type 2N4918/4919/4920 Excellent safe operating area Low collector saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2

isc Silicon NPN Power Transistor 2N4923 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector Saturation Voltage- V = 0.6V(Max.)@ I = 1A CE(sat) C Wide Area of Safe Operation Complement to Type 2N4920 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver circuits, switching