All Transistors. 2N4923G Datasheet

 

2N4923G Datasheet and Replacement


   Type Designator: 2N4923G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO-225
 

 2N4923G Substitution

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2N4923G Datasheet (PDF)

 ..1. Size:91K  onsemi
2n4923g.pdf pdf_icon

2N4923G

2N4921, 2N4922, 2N49232N4923 is a Preferred DeviceMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.Featureshttp://onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction -PD = 30

 ..2. Size:241K  onsemi
2n4921g 2n4922g 2n4923g.pdf pdf_icon

2N4923G

2N4921G, 2N4922G,2N4923GMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.www.onsemi.comFeatures1.0 AMPERE Low Saturation VoltageGENERAL PURPOSE Excellent Power DissipationPOWER TRANSISTORS Excellent Safe Operating Area40-80 VOLTS, 30 WATTS Complement

 8.1. Size:238K  motorola
2n4921 2n4922 2n4923.pdf pdf_icon

2N4923G

Order this documentMOTOROLAby 2N4921/DSEMICONDUCTOR TECHNICAL DATA2N4921Medium-Power Plastic NPNthruSilicon Transistors2N4923*. . . designed for driver circuits, switching, and amplifier applications. Thesehighperformance plastic devices feature:*Motorola Preferred Device Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp1 AMPERE Excellent

 8.2. Size:90K  onsemi
2n4921 2n4922 2n4923.pdf pdf_icon

2N4923G

2N4921, 2N4922, 2N49232N4923 is a Preferred DeviceMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.Featureshttp://onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction -PD = 30

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: TIP35C | JC328-16

Keywords - 2N4923G transistor datasheet

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