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2N5038G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5038G

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 140 W

Tensión colector-base (Vcb): 150 V

Tensión colector-emisor (Vce): 90 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 20 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 60 MHz

Capacitancia de salida (Cc): 500 pF

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TO-204AA

Búsqueda de reemplazo de transistor bipolar 2N5038G

 

2N5038G Datasheet (PDF)

1.1. 2n5038g.pdf Size:79K _onsemi

2N5038G
2N5038G

2N5038 NPN Silicon Transistors Fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications. Features http://onsemi.com • High Speed - tf = 0.5 ms (Max) • High Current - IC(max) = 30 Amps 20 AMPERE • Low Saturation - VCE(sat) = 2.5 V (Max)

4.1. 2n5038 2n5039.pdf Size:124K _motorola

2N5038G
2N5038G

Order this document MOTOROLA by 2N5038/D SEMICONDUCTOR TECHNICAL DATA 2N5038 * 2N5039 NPN Silicon Transistors *Motorola Preferred Device . . . fast switching speeds and high current capacity

4.2. 2n5038.pdf Size:42K _st

2N5038G
2N5038G

2N5038 ® HIGH CURRENT NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching 1 applications. 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collect

 4.3. 2n5038.pdf Size:79K _onsemi

2N5038G
2N5038G

2N5038 NPN Silicon Transistors Fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications. Features http://onsemi.com • High Speed - tf = 0.5 ms (Max) • High Current - IC(max) = 30 Amps 20 AMPERE • Low Saturation - VCE(sat) = 2.5 V (Max)

4.4. 2n5038 2n5039.pdf Size:95K _bocasemi

2N5038G
2N5038G

A Boca Semiconductor Corp. (BSC) http://www.bocasemi.com A http://www.bocasemi.com http://www.bocasemi.com

 4.5. 2n5038 2n5039.pdf Size:92K _jmnic

2N5038G
2N5038G

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5038/2N5039 DESCRIPTION ·With TO-3 package ·High current APPLICATIONS ·They are especially intended for high current and fast switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER COND

4.6. 2n5038 2n5039.pdf Size:118K _inchange_semiconductor

2N5038G
2N5038G

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5038 2N5039 DESCRIPTION ·With TO-3 package ·High speed ·Low collector saturation voltage APPLICATIONS ·They are especially intended for high current and fast switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute max

4.7. 2n5038.pdf Size:189K _inchange_semiconductor

2N5038G
2N5038G

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5038 DESCRIPTION ·High Speed-t = 0.5μs (Max) f ·Low Saturation Voltage- V ≤2.5V@ I = 20A CE(sat) C ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation. APPLICATIONS ·Designed for use in switching regulators, inverters, wide- band amplifiers and power oscillators

Otros transistores... 2SC628 , 2SC629 , 2SC63 , 2SC631 , 2SC631A , 2SC631AS , 2SC632 , 2SC632A , BC547C , 2SC633A , 2SC634 , 2SC634A , 2SC635 , 2SC636 , 2SC637 , 2SC638 , 2SC639 .

 

 
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