2N5153HR Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5153HR
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 3.3 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5.5 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 250 pF
Ganancia de corriente contínua (hFE): 70
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2N5153HR datasheet
2n5153hr.pdf
2N5153HR Hi-Rel PNP bipolar transistor 80 V, 5 A Datasheet - production data Features 1 3 2 Parameter Value TO-257 VCEO 80 V TO-39 IC (max.) 5 A 2 hFE at 10 V -150 mA > 70 1 3 Operating temperature -65 C to +200 C range SMD.5 Hi-Rel PNP bipolar transistor Linear gain characteristics Figure 1. Internal schematic diagram ESCC qualified European preferr
2n5151 2n5152 2n5153 2n5154.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
2n5153smd.pdf
2N5153SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 80V IC = 5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0
2n5151 2n5153.pdf
2N5151 2N5153 MECHANICAL DATA HIGH SPEED Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) MEDIUM VOLTAGE 7.75 (0.305) 8.51 (0.335) SWITCHES 4.19 (0.165) 4.95 (0.195) DESCRIPTION 0.89 max. (0.035) 12.70 The 2N5151 and the 2N5153 are silicon (0.500) 7.75 (0.305) min. 8.51 (0.335) expitaxial planar PNP transistors in dia. jedec TO-39 metal case intended for use in switc
Otros transistores... 2N5151-220M, 2N5151SMD05, 2N5151U3, 2N5151XSMD05, 2N5152A, 2N5152SMD, 2N5152SMD05, 2N5152U3, S9018, 2N5153SMD, 2N5153SMD05, 2N5153U3, 2N5154HR, 2N5154N1B, 2N5154N2A, 2N5154SMD05, 2N5154T2A
History: KT8149A-2
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