2N5153HR . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5153HR
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 3.3 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5.5 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 250 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TO-257 TO39
Búsqueda de reemplazo de 2N5153HR
2N5153HR Datasheet (PDF)
2n5153hr.pdf

2N5153HRHi-Rel PNP bipolar transistor 80 V, 5 ADatasheet - production dataFeatures132Parameter ValueTO-257 VCEO 80 VTO-39 IC (max.) 5 A2hFE at 10 V -150 mA > 7013Operating temperature -65 C to +200 CrangeSMD.5 Hi-Rel PNP bipolar transistor Linear gain characteristicsFigure 1. Internal schematic diagram ESCC qualified European preferr
2n5151 2n5152 2n5153 2n5154.pdf

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2n5153smd.pdf

2N5153SMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0
2n5151 2n5153.pdf

2N51512N5153MECHANICAL DATAHIGH SPEED Dimensions in mm (inches)8.89 (0.35)9.40 (0.37) MEDIUM VOLTAGE 7.75 (0.305)8.51 (0.335)SWITCHES4.19 (0.165)4.95 (0.195)DESCRIPTION0.89max.(0.035)12.70The 2N5151 and the 2N5153 are silicon(0.500)7.75 (0.305)min.8.51 (0.335)expitaxial planar PNP transistors india.jedec TO-39 metal case intended foruse in switc
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