2N5153HR Datasheet and Replacement
Type Designator: 2N5153HR
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 3.3 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5.5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO-257 TO39
2N5153HR Substitution
2N5153HR Datasheet (PDF)
2n5153hr.pdf

2N5153HRHi-Rel PNP bipolar transistor 80 V, 5 ADatasheet - production dataFeatures132Parameter ValueTO-257 VCEO 80 VTO-39 IC (max.) 5 A2hFE at 10 V -150 mA > 7013Operating temperature -65 C to +200 CrangeSMD.5 Hi-Rel PNP bipolar transistor Linear gain characteristicsFigure 1. Internal schematic diagram ESCC qualified European preferr
2n5151 2n5152 2n5153 2n5154.pdf

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2n5153smd.pdf

2N5153SMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0
2n5151 2n5153.pdf

2N51512N5153MECHANICAL DATAHIGH SPEED Dimensions in mm (inches)8.89 (0.35)9.40 (0.37) MEDIUM VOLTAGE 7.75 (0.305)8.51 (0.335)SWITCHES4.19 (0.165)4.95 (0.195)DESCRIPTION0.89max.(0.035)12.70The 2N5151 and the 2N5153 are silicon(0.500)7.75 (0.305)min.8.51 (0.335)expitaxial planar PNP transistors india.jedec TO-39 metal case intended foruse in switc
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
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