2N5237S Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5237S
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 150 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 15 MHz
Capacitancia de salida (Cc): 350 pF
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO39
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2N5237S datasheet
2n5237s.pdf
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5237S Low Power, High Voltage. Hermetic TO-39 Metal Package. Ideally Suited For Switching And General Purpose Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter Voltage 120V VEBO Emitter Base
2n5237.pdf
Data Sheet No. 2N5237 Generic Part Number Type 2N5237 2N5237 Geometry 3111 Polarity NPN REF MIL-PRF-19500/394 Qual Level JAN - JANTXV Features Silicon power transistor for use in high speed switching applications. Housed in a TO-39 case. Also available in chip form using the 3111 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/394 which Semi
2n4150 2n5237 2n5238.pdf
NPN Power Silicon Transistor 2N4150, 2N5237 & 2N5238 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/384 TO-5 Package Maximum Ratings Ratings Symbol 2N4150 2N5237 2N5238 Units Collector - Emitter Voltage VCEO 70 120 170 Vdc Collector - Base Voltage VCBO 100 150 200 Vdc Emitter - Base Voltage VEBO 10.0 Vdc Collector Current IC 4.0 Adc Total Power Dissipation @
2n5232a.pdf
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Otros transistores... 2N5154XX, 2N5157T1, 2N5157T3, 2N5190G, 2N5191G, 2N5192G, 2N5194G, 2N5195G, 2N3055, 2N5238S, 2N5302G, 2N5320X, 2N5338LCC4, 2N5339LCC4, 2N5339U3, 2N5401CSM, 2N5401DCSM
History: 2N5191G
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