2N5237S Specs and Replacement
Type Designator: 2N5237S
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 350 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO39
2N5237S Substitution
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2N5237S datasheet
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5237S Low Power, High Voltage. Hermetic TO-39 Metal Package. Ideally Suited For Switching And General Purpose Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter Voltage 120V VEBO Emitter Base ... See More ⇒
Data Sheet No. 2N5237 Generic Part Number Type 2N5237 2N5237 Geometry 3111 Polarity NPN REF MIL-PRF-19500/394 Qual Level JAN - JANTXV Features Silicon power transistor for use in high speed switching applications. Housed in a TO-39 case. Also available in chip form using the 3111 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/394 which Semi... See More ⇒
NPN Power Silicon Transistor 2N4150, 2N5237 & 2N5238 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/384 TO-5 Package Maximum Ratings Ratings Symbol 2N4150 2N5237 2N5238 Units Collector - Emitter Voltage VCEO 70 120 170 Vdc Collector - Base Voltage VCBO 100 150 200 Vdc Emitter - Base Voltage VEBO 10.0 Vdc Collector Current IC 4.0 Adc Total Power Dissipation @ ... See More ⇒
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
Detailed specifications: 2N5154XX, 2N5157T1, 2N5157T3, 2N5190G, 2N5191G, 2N5192G, 2N5194G, 2N5195G, 2N3055, 2N5238S, 2N5302G, 2N5320X, 2N5338LCC4, 2N5339LCC4, 2N5339U3, 2N5401CSM, 2N5401DCSM
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