2N5237S Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5237S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 350 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO39
2N5237S Transistor Equivalent Substitute - Cross-Reference Search
2N5237S Datasheet (PDF)
2n5237s.pdf
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5237S Low Power, High Voltage. Hermetic TO-39 Metal Package. Ideally Suited For Switching And General Purpose Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter Voltage 120V VEBO Emitter Base
2n5237.pdf
Data Sheet No. 2N5237Generic Part Number:Type 2N52372N5237Geometry 3111Polarity NPNREF: MIL-PRF-19500/394Qual Level: JAN - JANTXVFeatures: Silicon power transistor for use inhigh speed switching applications. Housed in a TO-39 case. Also available in chip form usingthe 3111 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/394 whichSemi
2n4150 2n5237 2n5238.pdf
NPN Power Silicon Transistor2N4150, 2N5237 & 2N5238Features Available in JAN, JANTX, and JANTXVper MIL-PRF-19500/384 TO-5 PackageMaximum RatingsRatings Symbol 2N4150 2N5237 2N5238 UnitsCollector - Emitter Voltage VCEO 70 120 170 VdcCollector - Base Voltage VCBO 100 150 200 VdcEmitter - Base Voltage VEBO 10.0 VdcCollector Current IC 4.0 AdcTotal Power Dissipation @
2n5232a.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5232 a.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N52322N5232ATO-92Plastic PackageABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 50 VVCBOCollector Base Voltage 70 VVEBOEmitter Base Voltage 5VICCollector Current 1
2n5238s.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 DEVICES LEVELS JAN 2N4150 2N5237 2N5238 JANTX 2N4150S 2N5237S 2N5238S JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) 2N4150 2N5237 2N5238
2n5172 2n5174 2n5209 2n5210 2n5219 2n5220 2n5221 2n5223 2n5225 2n5226 2n5228 2n5232 2n5232a 2n5249 2n5249a 2n5305.pdf
2n5239.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5239 DESCRIPTION With TO-3 package High breakdown voltage High power dissipation APPLICATIONS Switching regulator Inverters Power amplifiers Deflection circuits High-voltage bridge amplifiers PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
