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2N5551SC . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N5551SC
   Código: ZFC
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.35 W
   Tensión colector-base (Vcb): 180 V
   Tensión colector-emisor (Vce): 160 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 150
   Paquete / Cubierta: SOT-23
 
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2N5551SC Datasheet (PDF)

 ..1. Size:339K  kec
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2N5551SC

SEMICONDUCTOR 2N5551SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.EL B LFEATURES High Collector Breakdwon VoltageDIM MILLIMETERS_+A 2.90 0.123: VCBO=180V, VCEO=160VB 1.30+0.20/-0.15C 1.30 MAXLow Leakage Current. 1D 0.40+0.15/-0.05: ICBO=50nA(Max.) VCB=120V E 2.40+0.30/-0.20G 1.90Low Saturatio

 7.1. Size:354K  kec
2n5551s.pdf pdf_icon

2N5551SC

SEMICONDUCTOR 2N5551STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.EL B LDIM MILLIMETERSFEATURES _+A 2.93 0.20B 1.30+0.20/-0.15High Collector Breakdwon VoltageC 1.30 MAX2: VCBO=180V, VCEO=160V 3 D 0.40+0.15/-0.05E 2.40+0.30/-0.20Low Leakage Current.1G 1.90H 0.95: ICBO=50nA(Max.) VCB=120VJ 0.13+

 8.1. Size:188K  motorola
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2N5551SC

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5550/DAmplifier Transistors2N5550NPN Silicon*2N5551*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSRating Symbol 2N5550 2N5551 UnitCASE 2904, STYLE 1TO92 (TO226AA)CollectorEmitter Voltage VCEO 140 160 VdcCollectorBase Voltage VCBO 160 180 VdcEmitterB

 8.2. Size:53K  philips
2n5550 2n5551 2.pdf pdf_icon

2N5551SC

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5550; 2N5551NPN high-voltage transistorsProduct specification 2004 Oct 28Supersedes data of 1999 Apr 23Philips Semiconductors Product specificationNPN high-voltage transistors 2N5550; 2N5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 collector2 baseAPPLICATIONS

Otros transistores... 2N5550G , 2N5551CN , 2N5551CSM , 2N5551DCSM , 2N5551G , 2N5551HR , 2N5551K , 2N5551N , 2N2222A , 2N5655G , 2N5657G , 2N5660U3 , 2N5661U3 , 2N5664SMD , 2N5664SMD05 , 2N5665N1 , 2N5665SMD .

 

 
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