2N5655G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5655G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 275 V
Tensión colector-emisor (Vce): 250 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Capacitancia de salida (Cc): 25 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO-225
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2N5655G Datasheet (PDF)
2n5655g.pdf

2N5655G, 2N5657GPlastic NPN SiliconHigh-Voltage PowerTransistorsThese devices are designed for use in line-operated equipment suchas audio output amplifiers; low-current, high-voltage converters; andhttp://onsemi.comAC line relays.0.5 AMPEREFeaturesPOWER TRANSISTORS Excellent DC Current GainNPN SILICON High Current-Gain - Bandwidth Product250-350 VOLTS, 20 WATT
2n5655g 2n5657g.pdf

2N5655G, 2N5657GPlastic NPN SiliconHigh-Voltage PowerTransistorsThese devices are designed for use in line-operated equipment suchas audio output amplifiers; low-current, high-voltage converters; andhttp://onsemi.comAC line relays.0.5 AMPEREFeaturesPOWER TRANSISTORS Excellent DC Current GainNPN SILICON High Current-Gain - Bandwidth Product250-350 VOLTS, 20 WATT
2n5655-57 2n5655 2n5656 2n5657.pdf

Order this documentMOTOROLAby 2N5655/DSEMICONDUCTOR TECHNICAL DATA2N56552N5656Plastic NPN Silicon2N5657High-Voltage Power Transistor. . . designed for use in lineoperated equipment such as audio output amplifiers;lowcurrent, highvoltage converters; and AC line relays. 0.5 AMPEREPOWER TRANSISTORS Excellent DC Current Gain hFE = 30250 @ IC = 100 mAdcNP
2n5655 2n5657.pdf

2N5655, 2N5657Plastic NPN SiliconHigh-Voltage PowerTransistorThese devices are designed for use in line-operated equipment suchas audio output amplifiers; low-current, high-voltage converters; andhttp://onsemi.comAC line relays.0.5 AMPEREFeaturesPOWER TRANSISTORS Excellent DC Current Gain -NPN SILICONhFE = 30-250 @ IC = 100 mAdc250-350 VOLTS, 20 WATTS Current
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BDX83C | BSS56 | 2SB1204
History: BDX83C | BSS56 | 2SB1204



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