2N5655G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5655G 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 275 V
Tensión colector-emisor (Vce): 250 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 10 MHz
Capacitancia de salida (Cc): 25 pF
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO-225
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2N5655G datasheet
2n5655g.pdf
2N5655G, 2N5657G Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and http //onsemi.com AC line relays. 0.5 AMPERE Features POWER TRANSISTORS Excellent DC Current Gain NPN SILICON High Current-Gain - Bandwidth Product 250-350 VOLTS, 20 WATT
2n5655g 2n5657g.pdf
2N5655G, 2N5657G Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and http //onsemi.com AC line relays. 0.5 AMPERE Features POWER TRANSISTORS Excellent DC Current Gain NPN SILICON High Current-Gain - Bandwidth Product 250-350 VOLTS, 20 WATT
2n5655-57 2n5655 2n5656 2n5657.pdf
Order this document MOTOROLA by 2N5655/D SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 Plastic NPN Silicon 2N5657 High-Voltage Power Transistor . . . designed for use in line operated equipment such as audio output amplifiers; low current, high voltage converters; and AC line relays. 0.5 AMPERE POWER TRANSISTORS Excellent DC Current Gain hFE = 30 250 @ IC = 100 mAdc NP
2n5655 2n5657.pdf
2N5655, 2N5657 Plastic NPN Silicon High-Voltage Power Transistor These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and http //onsemi.com AC line relays. 0.5 AMPERE Features POWER TRANSISTORS Excellent DC Current Gain - NPN SILICON hFE = 30-250 @ IC = 100 mAdc 250-350 VOLTS, 20 WATTS Current
Otros transistores... 2N5551CN, 2N5551CSM, 2N5551DCSM, 2N5551G, 2N5551HR, 2N5551K, 2N5551N, 2N5551SC, BD335, 2N5657G, 2N5660U3, 2N5661U3, 2N5664SMD, 2N5664SMD05, 2N5665N1, 2N5665SMD, 2N5666S
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