2N5655G datasheet, аналоги, основные параметры

Наименование производителя: 2N5655G  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 20 W

Макcимально допустимое напряжение коллектор-база (Ucb): 275 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 0.5 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 10 MHz

Ёмкость коллекторного перехода (Cc): 25 pf

Статический коэффициент передачи тока (hFE): 30

Корпус транзистора: TO-225

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2N5655G даташит

 ..1. Size:119K  onsemi
 2n5655g.pdf pdf_icon

2N5655G

2N5655G, 2N5657G Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and http //onsemi.com AC line relays. 0.5 AMPERE Features POWER TRANSISTORS Excellent DC Current Gain NPN SILICON High Current-Gain - Bandwidth Product 250-350 VOLTS, 20 WATT

 ..2. Size:175K  onsemi
 2n5655g 2n5657g.pdf pdf_icon

2N5655G

2N5655G, 2N5657G Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and http //onsemi.com AC line relays. 0.5 AMPERE Features POWER TRANSISTORS Excellent DC Current Gain NPN SILICON High Current-Gain - Bandwidth Product 250-350 VOLTS, 20 WATT

 8.1. Size:176K  motorola
 2n5655-57 2n5655 2n5656 2n5657.pdf pdf_icon

2N5655G

Order this document MOTOROLA by 2N5655/D SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 Plastic NPN Silicon 2N5657 High-Voltage Power Transistor . . . designed for use in line operated equipment such as audio output amplifiers; low current, high voltage converters; and AC line relays. 0.5 AMPERE POWER TRANSISTORS Excellent DC Current Gain hFE = 30 250 @ IC = 100 mAdc NP

 8.2. Size:80K  onsemi
 2n5655 2n5657.pdf pdf_icon

2N5655G

2N5655, 2N5657 Plastic NPN Silicon High-Voltage Power Transistor These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and http //onsemi.com AC line relays. 0.5 AMPERE Features POWER TRANSISTORS Excellent DC Current Gain - NPN SILICON hFE = 30-250 @ IC = 100 mAdc 250-350 VOLTS, 20 WATTS Current

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: 2N5551CN, 2N5551CSM, 2N5551DCSM, 2N5551G, 2N5551HR, 2N5551K, 2N5551N, 2N5551SC, BD335, 2N5657G, 2N5660U3, 2N5661U3, 2N5664SMD, 2N5664SMD05, 2N5665N1, 2N5665SMD, 2N5666S