2N5681SMD05 Datasheet. Equivalente

 ..1. Size:10K  semelab
 2n5681smd05.pdf

2N5681SMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 100V IC = 1A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab her

 8.1. Size:123K  central
 2n5679 2n5680 2n5681 2n5682.pdf

DATA SHEET 2N5679 2N5680 PNP 2N5681 2N5682 NPN COMPLEMENTARY SILICON HIGH POWER TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5679 Series types are complementary silicon high power transistors manufactured by the epitaxial planar process and designed for general-purpose amplifier and switching applications where high voltages are required. MAXIMUM RATIN

 8.2. Size:43K  bocasemi
 2n5679 2n5680 2n5681 2n5682.pdf

IS/ISO 9002 IS / IECQC 700000 Lic# QSC/L- 000019.2 IS / IECQC 750100 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681 2N5680 2N5682 PNP NPN TO-39 TO-39 Boca Semiconductor Corp. BSC These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL 2N5

 9.1. Size:270K  motorola
 2n5684 2n5685 2n5686.pdf

Order this document MOTOROLA by 2N5684/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5684 High-Current Complementary NPN Silicon Power Transistors 2N5685 . . . designed for use in high power amplifier and switching circuit applications. High Current Capability IC Continuous = 50 Amperes. * 2N5686 DC Current Gain hFE = 15 60 @ IC = 25 Adc Low Collector Emitter Sa

 9.2. Size:114K  onsemi
 2n5684 2n5686.pdf

2N5684 (PNP), 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. http //onsemi.com Features 50 AMPERE High Current Capability - IC Continuous = 50 Amperes COMPLEMENTARY SILICON DC Current Gain - hFE = 15 - 60 @ IC = 25 Adc POWER TRANSISTORS Low Collector-Emitte

 9.3. Size:114K  onsemi
 2n5684g.pdf

2N5684 (PNP), 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. http //onsemi.com Features 50 AMPERE High Current Capability - IC Continuous = 50 Amperes COMPLEMENTARY SILICON DC Current Gain - hFE = 15 - 60 @ IC = 25 Adc POWER TRANSISTORS Low Collector-Emitte

 9.4. Size:114K  onsemi
 2n5686g.pdf

2N5684 (PNP), 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. http //onsemi.com Features 50 AMPERE High Current Capability - IC Continuous = 50 Amperes COMPLEMENTARY SILICON DC Current Gain - hFE = 15 - 60 @ IC = 25 Adc POWER TRANSISTORS Low Collector-Emitte

 9.5. Size:185K  mospec
 2n5683-86.pdf

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 9.6. Size:522K  semelab
 2n5682x.pdf

 9.7. Size:187K  cdil
 2n5679 2n5680 81 82.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681 2N5680 2N5682 PNP NPN TO-39 TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL 2N5679 2N5680 UNITS 2N5681 2N5682 Collector -Emitter Voltage VCEO 100 120 V Collector -Base

 9.8. Size:164K  aeroflex
 2n5679 2n5680.pdf

PNP Power Silicon Transistor 2N5679 & 2N5680 Features Available in JAN, JANTX and JANTXV per MIL-PRF-19500/582 TO-39 (TO-205AD) Package Maximum Ratings (TA = 25 C unless otherwise noted) Ratings Symbol 2N5679 2N5680 Units Collector - Emitter Voltage VCEO 100 120 Vdc Collector - Base Voltage VCBO 100 120 Vdc Emitter - Base Voltage VEBO 4.0 4.0 Vdc Collector Current IC 1.0 1.0