2N5681SMD05 Datasheet. Specs and Replacement

Type Designator: 2N5681SMD05  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Collector Current |Ic max|: 1 A

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO-276AA

 2N5681SMD05 Substitution

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2N5681SMD05 datasheet

 ..1. Size:10K  semelab

2n5681smd05.pdf pdf_icon

2N5681SMD05

2N5681SMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 100V IC = 1A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab her... See More ⇒

 8.1. Size:123K  central

2n5679 2n5680 2n5681 2n5682.pdf pdf_icon

2N5681SMD05

DATA SHEET 2N5679 2N5680 PNP 2N5681 2N5682 NPN COMPLEMENTARY SILICON HIGH POWER TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5679 Series types are complementary silicon high power transistors manufactured by the epitaxial planar process and designed for general-purpose amplifier and switching applications where high voltages are required. MAXIMUM RATIN... See More ⇒

 8.2. Size:43K  bocasemi

2n5679 2n5680 2n5681 2n5682.pdf pdf_icon

2N5681SMD05

IS/ISO 9002 IS / IECQC 700000 Lic# QSC/L- 000019.2 IS / IECQC 750100 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681 2N5680 2N5682 PNP NPN TO-39 TO-39 Boca Semiconductor Corp. BSC These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL 2N5... See More ⇒

 9.1. Size:270K  motorola

2n5684 2n5685 2n5686.pdf pdf_icon

2N5681SMD05

Order this document MOTOROLA by 2N5684/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5684 High-Current Complementary NPN Silicon Power Transistors 2N5685 . . . designed for use in high power amplifier and switching circuit applications. High Current Capability IC Continuous = 50 Amperes. * 2N5686 DC Current Gain hFE = 15 60 @ IC = 25 Adc Low Collector Emitter Sa... See More ⇒

Detailed specifications: 2N5665N1, 2N5665SMD, 2N5666S, 2N5666SMD, 2N5666SMD05, 2N5666U3, 2N5667N1, 2N5667S, SS8050, 2N5682X, 2N5684G, 2N5686G, 2N5777, 2N5778, 2N5779, 2N5780, 2N5781XL

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