2N5684G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5684G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 50
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2
MHz
Capacitancia de salida (Cc): 2000
pF
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta:
TO-204
2N5684G
Datasheet (PDF)
..1. Size:114K onsemi
2n5684g.pdf
2N5684 (PNP), 2N5686 (NPN)High-CurrentComplementary SiliconPower TransistorsThese packages are designed for use in high-power amplifier andswitching circuit applications.http://onsemi.comFeatures50 AMPERE High Current Capability - IC Continuous = 50 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15 - 60 @ IC = 25 AdcPOWER TRANSISTORS Low Collector-Emitte
8.1. Size:270K motorola
2n5684 2n5685 2n5686.pdf
Order this documentMOTOROLAby 2N5684/DSEMICONDUCTOR TECHNICAL DATAPNP2N5684High-Current ComplementaryNPNSilicon Power Transistors2N5685. . . designed for use in highpower amplifier and switching circuit applications. High Current Capability IC Continuous = 50 Amperes.*2N5686 DC Current Gain hFE = 1560 @ IC = 25 Adc Low CollectorEmitter Sa
8.2. Size:114K onsemi
2n5684 2n5686.pdf
2N5684 (PNP), 2N5686 (NPN)High-CurrentComplementary SiliconPower TransistorsThese packages are designed for use in high-power amplifier andswitching circuit applications.http://onsemi.comFeatures50 AMPERE High Current Capability - IC Continuous = 50 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15 - 60 @ IC = 25 AdcPOWER TRANSISTORS Low Collector-Emitte
9.1. Size:123K central
2n5679 2n5680 2n5681 2n5682.pdf
DATA SHEET2N5679 2N5680 PNP 2N5681 2N5682 NPN COMPLEMENTARY SILICON HIGH POWER TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5679 Series types are complementary silicon high power transistors manufactured by the epitaxial planar process and designed for general-purpose amplifier and switching applications where high voltages are required. MAXIMUM RATIN
9.2. Size:114K onsemi
2n5686g.pdf
2N5684 (PNP), 2N5686 (NPN)High-CurrentComplementary SiliconPower TransistorsThese packages are designed for use in high-power amplifier andswitching circuit applications.http://onsemi.comFeatures50 AMPERE High Current Capability - IC Continuous = 50 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15 - 60 @ IC = 25 AdcPOWER TRANSISTORS Low Collector-Emitte
9.5. Size:10K semelab
2n5681smd05.pdf
2N5681SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 100V IC = 1A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab her
9.6. Size:43K bocasemi
2n5679 2n5680 2n5681 2n5682.pdf
IS/ISO 9002 IS / IECQC 700000Lic# QSC/L- 000019.2 IS / IECQC 750100Continental Device India LimitedAn IS/ISO 9002 and IECQ Certified ManufacturerPNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681 2N5680 2N5682 PNP NPNTO-39 TO-39Boca Semiconductor Corp. BSCThese Are High Voltage & High Current, General Purpose TransistorsABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL 2N5
9.7. Size:187K cdil
2n5679 2n5680 81 82.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681 2N5680 2N5682 PNP NPNTO-39 TO-39These Are High Voltage & High Current, General Purpose TransistorsABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL 2N5679 2N5680 UNITS2N5681 2N5682Collector -Emitter Voltage VCEO 100 120 VCollector -Base
9.8. Size:164K aeroflex
2n5679 2n5680.pdf
PNP Power Silicon Transistor2N5679 & 2N5680Features Available in JAN, JANTX and JANTXVper MIL-PRF-19500/582 TO-39 (TO-205AD) PackageMaximum Ratings (TA = 25C unless otherwise noted)Ratings Symbol 2N5679 2N5680 UnitsCollector - Emitter Voltage VCEO 100 120 VdcCollector - Base Voltage VCBO 100 120 VdcEmitter - Base Voltage VEBO 4.0 4.0 VdcCollector Current IC 1.0 1.0
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