2N5684G Datasheet. Specs and Replacement

Type Designator: 2N5684G  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 50 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 2 MHz

Collector Capacitance (Cc): 2000 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO-204

 2N5684G Substitution

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2N5684G datasheet

 ..1. Size:114K  onsemi

2n5684g.pdf pdf_icon

2N5684G

2N5684 (PNP), 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. http //onsemi.com Features 50 AMPERE High Current Capability - IC Continuous = 50 Amperes COMPLEMENTARY SILICON DC Current Gain - hFE = 15 - 60 @ IC = 25 Adc POWER TRANSISTORS Low Collector-Emitte... See More ⇒

 8.1. Size:270K  motorola

2n5684 2n5685 2n5686.pdf pdf_icon

2N5684G

Order this document MOTOROLA by 2N5684/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5684 High-Current Complementary NPN Silicon Power Transistors 2N5685 . . . designed for use in high power amplifier and switching circuit applications. High Current Capability IC Continuous = 50 Amperes. * 2N5686 DC Current Gain hFE = 15 60 @ IC = 25 Adc Low Collector Emitter Sa... See More ⇒

 8.2. Size:114K  onsemi

2n5684 2n5686.pdf pdf_icon

2N5684G

2N5684 (PNP), 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. http //onsemi.com Features 50 AMPERE High Current Capability - IC Continuous = 50 Amperes COMPLEMENTARY SILICON DC Current Gain - hFE = 15 - 60 @ IC = 25 Adc POWER TRANSISTORS Low Collector-Emitte... See More ⇒

 9.1. Size:123K  central

2n5679 2n5680 2n5681 2n5682.pdf pdf_icon

2N5684G

DATA SHEET 2N5679 2N5680 PNP 2N5681 2N5682 NPN COMPLEMENTARY SILICON HIGH POWER TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5679 Series types are complementary silicon high power transistors manufactured by the epitaxial planar process and designed for general-purpose amplifier and switching applications where high voltages are required. MAXIMUM RATIN... See More ⇒

Detailed specifications: 2N5666S, 2N5666SMD, 2N5666SMD05, 2N5666U3, 2N5667N1, 2N5667S, 2N5681SMD05, 2N5682X, 9014, 2N5686G, 2N5777, 2N5778, 2N5779, 2N5780, 2N5781XL, 2N5782L, 2N5784SMD

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