2N5778 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5778  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 12 V

Corriente del colector DC máxima (Ic): 0.25 A

Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 7.6 pF

Ganancia de corriente contínua (hFE): 1000

Encapsulados: TO92

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2N5778 datasheet

 ..1. Size:57K  njs
 2n5779 2n5779 2n5778.pdf pdf_icon

2N5778

 ..2. Size:57K  njs
 2n5778.pdf pdf_icon

2N5778

 9.1. Size:585K  fairchild semi
 2n5771 mmbt5771.pdf pdf_icon

2N5778

2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage

 9.2. Size:708K  fairchild semi
 2n5771.pdf pdf_icon

2N5778

2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage

MOSTRAR MÁS

Otros transistores... 2N5666U3, 2N5667N1, 2N5667S, 2N5681SMD05, 2N5682X, 2N5684G, 2N5686G, 2N5777, 2SC945, 2N5779, 2N5780, 2N5781XL, 2N5782L, 2N5784SMD, 2N5784SMD05, 2N5785N1, 2N5785SMD