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2N5778 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N5778
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 12 V
   Corriente del colector DC máxima (Ic): 0.25 A
   Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 7.6 pF
   Ganancia de corriente contínua (hfe): 1000
   Paquete / Cubierta: TO92
 

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2N5778 PDF detailed specifications

 ..1. Size:57K  njs
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2N5778

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 ..2. Size:57K  njs
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2N5778

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 9.1. Size:585K  fairchild semi
2n5771 mmbt5771.pdf pdf_icon

2N5778

2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage... See More ⇒

 9.2. Size:708K  fairchild semi
2n5771.pdf pdf_icon

2N5778

2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage... See More ⇒

Otros transistores... 2N5666U3 , 2N5667N1 , 2N5667S , 2N5681SMD05 , 2N5682X , 2N5684G , 2N5686G , 2N5777 , 2SC945 , 2N5779 , 2N5780 , 2N5781XL , 2N5782L , 2N5784SMD , 2N5784SMD05 , 2N5785N1 , 2N5785SMD .

History: BSX53 | BSX52A

 

 
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