2N5885G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5885G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 25
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4
MHz
Capacitancia de salida (Cc): 500
pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta:
TO204AA
Búsqueda de reemplazo de transistor bipolar 2N5885G
2N5885G
Datasheet (PDF)
..1. Size:69K onsemi
2n5885g.pdf 
2N5883, 2N5884 (PNP)2N5885, 2N5886 (NPN)2N5884 and 2N5886 are Preferred DevicesComplementary SiliconHigh-Power TransistorsComplementary silicon high-power transistors are designed forgeneral-purpose power amplifier and switching applications.Features25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage -SILICON POWER TRANSISTORSVCE(sat) = 1.0 Vdc, (max) at IC
..2. Size:69K onsemi
2n5883g 2n5883g 2n5885g.pdf
2N5883, 2N5884 (PNP)2N5885, 2N5886 (NPN)2N5884 and 2N5886 are Preferred DevicesComplementary SiliconHigh-Power TransistorsComplementary silicon high-power transistors are designed forgeneral-purpose power amplifier and switching applications.Features25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage -SILICON POWER TRANSISTORSVCE(sat) = 1.0 Vdc, (max) at IC
8.1. Size:275K motorola
2n5883 2n5884 2n5885 2n5886.pdf
Order this documentMOTOROLAby 2N5883/DSEMICONDUCTOR TECHNICAL DATAPNP2N5883Complementary SiliconHigh-Power Transistors2N5884*NPN. . . designed for generalpurpose power amplifier and switching applications. Low CollectorEmitter Saturation Voltage 2N5885VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current2N5886*ICEX = 1.0 mAdc (max) at Rated
8.2. Size:105K central
2n5883 2n5884 2n5885 2n5886 2.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
8.3. Size:94K onsemi
2n5883 2n5884 2n5885 2n5886.pdf
2N5883, 2N5884 (PNP)2N5885, 2N5886 (NPN)2N5884 and 2N5886 are Preferred DevicesComplementary SiliconHigh-Power TransistorsComplementary silicon high-power transistors are designed forgeneral-purpose power amplifier and switching applications.http://onsemi.comFeatures25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage -SILICON POWER TRANSISTORSVCE(sat) = 1
8.4. Size:190K bocasemi
2n5883 2n5884 2n5885 2n5886.pdf
ABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.com
8.5. Size:111K jmnic
2n5885 2n5886.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5885 2N5886 DESCRIPTION With TO-3 package Complement to type 2N5883 2N5884 APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PAR
8.6. Size:183K inchange semiconductor
2n5885 5886.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5885/5886 DESCRIPTION DC Current Gain- : hFE= 20(Min)@IC= 10A Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A Complement to Type 2N5883/5884 APPLICATIONS Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL P
8.7. Size:187K inchange semiconductor
2n5885.pdf
isc Silicon NPN Power Transistors 2N5885DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 15ACE(sat) CDC Current Gain-: h = 20- @I = 10AFE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplications.ABSOLUTE MAXIMUM R
8.8. Size:184K inchange semiconductor
2n5885 2n5886.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5885/5886 DESCRIPTION DC Current Gain- : hFE= 20(Min)@IC= 10A Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A Complement to Type 2N5883/5884 APPLICATIONS Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL P
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