2N5885G Todos los transistores

 ..1. Size:69K  onsemi
 2n5885g.pdf

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High-Power Transistors Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications. Features 25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - SILICON POWER TRANSISTORS VCE(sat) = 1.0 Vdc, (max) at IC

 ..2. Size:69K  onsemi
 2n5883g 2n5883g 2n5885g.pdf

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High-Power Transistors Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications. Features 25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - SILICON POWER TRANSISTORS VCE(sat) = 1.0 Vdc, (max) at IC

 8.1. Size:275K  motorola
 2n5883 2n5884 2n5885 2n5886.pdf

Order this document MOTOROLA by 2N5883/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 Complementary Silicon High-Power Transistors 2N5884* NPN . . . designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage 2N5885 VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current 2N5886* ICEX = 1.0 mAdc (max) at Rated

 8.2. Size:105K  central
 2n5883 2n5884 2n5885 2n5886 2.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com

 8.3. Size:94K  onsemi
 2n5883 2n5884 2n5885 2n5886.pdf

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High-Power Transistors Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications. http //onsemi.com Features 25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - SILICON POWER TRANSISTORS VCE(sat) = 1

 8.4. Size:190K  bocasemi
 2n5883 2n5884 2n5885 2n5886.pdf

A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com

 8.5. Size:111K  jmnic
 2n5885 2n5886.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5885 2N5886 DESCRIPTION With TO-3 package Complement to type 2N5883 2N5884 APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PAR

 8.6. Size:183K  inchange semiconductor
 2n5885 5886.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5885/5886 DESCRIPTION DC Current Gain- hFE= 20(Min)@IC= 10A Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC= 15A Complement to Type 2N5883/5884 APPLICATIONS Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL P

 8.7. Size:187K  inchange semiconductor
 2n5885.pdf

isc Silicon NPN Power Transistors 2N5885 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 15A CE(sat) C DC Current Gain- h = 20- @I = 10A FE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM R

 8.8. Size:184K  inchange semiconductor
 2n5885 2n5886.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5885/5886 DESCRIPTION DC Current Gain- hFE= 20(Min)@IC= 10A Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC= 15A Complement to Type 2N5883/5884 APPLICATIONS Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL P