2N5885G Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5885G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO204AA
2N5885G Transistor Equivalent Substitute - Cross-Reference Search
2N5885G Datasheet (PDF)
2n5885g.pdf
2N5883, 2N5884 (PNP)2N5885, 2N5886 (NPN)2N5884 and 2N5886 are Preferred DevicesComplementary SiliconHigh-Power TransistorsComplementary silicon high-power transistors are designed forgeneral-purpose power amplifier and switching applications.Features25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage -SILICON POWER TRANSISTORSVCE(sat) = 1.0 Vdc, (max) at IC
2n5883g 2n5883g 2n5885g.pdf
2N5883, 2N5884 (PNP)2N5885, 2N5886 (NPN)2N5884 and 2N5886 are Preferred DevicesComplementary SiliconHigh-Power TransistorsComplementary silicon high-power transistors are designed forgeneral-purpose power amplifier and switching applications.Features25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage -SILICON POWER TRANSISTORSVCE(sat) = 1.0 Vdc, (max) at IC
2n5883 2n5884 2n5885 2n5886.pdf
Order this documentMOTOROLAby 2N5883/DSEMICONDUCTOR TECHNICAL DATAPNP2N5883Complementary SiliconHigh-Power Transistors2N5884*NPN. . . designed for generalpurpose power amplifier and switching applications. Low CollectorEmitter Saturation Voltage 2N5885VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current2N5886*ICEX = 1.0 mAdc (max) at Rated
2n5883 2n5884 2n5885 2n5886 2.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
2n5883 2n5884 2n5885 2n5886.pdf
2N5883, 2N5884 (PNP)2N5885, 2N5886 (NPN)2N5884 and 2N5886 are Preferred DevicesComplementary SiliconHigh-Power TransistorsComplementary silicon high-power transistors are designed forgeneral-purpose power amplifier and switching applications.http://onsemi.comFeatures25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage -SILICON POWER TRANSISTORSVCE(sat) = 1
2n5883 2n5884 2n5885 2n5886.pdf
ABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.com
2n5885 2n5886.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5885 2N5886 DESCRIPTION With TO-3 package Complement to type 2N5883 2N5884 APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PAR
2n5885 5886.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5885/5886 DESCRIPTION DC Current Gain- : hFE= 20(Min)@IC= 10A Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A Complement to Type 2N5883/5884 APPLICATIONS Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL P
2n5885.pdf
isc Silicon NPN Power Transistors 2N5885DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 15ACE(sat) CDC Current Gain-: h = 20- @I = 10AFE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplications.ABSOLUTE MAXIMUM R
2n5885 2n5886.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5885/5886 DESCRIPTION DC Current Gain- : hFE= 20(Min)@IC= 10A Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A Complement to Type 2N5883/5884 APPLICATIONS Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL P
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
