2N6109G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6109G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 7
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4
MHz
Capacitancia de salida (Cc): 250
pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar 2N6109G
2N6109G
Datasheet (PDF)
..1. Size:241K onsemi
2n6107g 2n6109g 2n6111g 2n6288g 2n6292g.pdf
2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-
..2. Size:102K onsemi
2n6109g 2n6109g 2n6107g.pdf
2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-
8.1. Size:149K motorola
2n6107 2n6111 2n6288 2n6109 2n6292.pdf
Order this documentMOTOROLAby 2N6107/DSEMICONDUCTOR TECHNICAL DATA2N6057 thru 2N6059(See 2N6050)Complementary Silicon PlasticPNPPower Transistors 2N6107. . . designed for use in generalpurpose amplifier and switching applications.2N6109* DC Current Gain Specified to 7.0 AmpereshFE = 30150 @ IC = 3.0 Adc 2N6111, 2N6288hFE = 2.3 (Min) @ IC = 7.0 Adc All
8.3. Size:241K onsemi
2n6107 2n6109 2n6111 2n6288 2n6292.pdf
2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-
8.5. Size:249K cdil
2n6109.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N61092N6109 PNP PLASTIC POWER TRANSISTORGeneral Purpose Amplifier and Switching ApplicationPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.EBFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E 1.15 1.401 2 3F 3.75
8.6. Size:197K inchange semiconductor
2n6109.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6109DESCRIPTIONDC Current Gain-: h = 30-150@ I = -2.5AFE CCollector-Emitter Sustaining Voltage-: V = -50V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATIN
8.7. Size:121K inchange semiconductor
2n6107 2n6109 2n6111.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6107 2N6109 2N6111 DESCRIPTION With TO-220 package Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 B
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