Справочник транзисторов. 2N6109G

 

Биполярный транзистор 2N6109G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N6109G
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 40 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 7 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 4 MHz
   Ёмкость коллекторного перехода (Cc): 250 pf
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO220

 Аналоги (замена) для 2N6109G

 

 

2N6109G Datasheet (PDF)

 ..1. Size:241K  onsemi
2n6107g 2n6109g 2n6111g 2n6288g 2n6292g.pdf

2N6109G
2N6109G

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

 ..2. Size:102K  onsemi
2n6109g 2n6109g 2n6107g.pdf

2N6109G
2N6109G

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

 8.1. Size:149K  motorola
2n6107 2n6111 2n6288 2n6109 2n6292.pdf

2N6109G
2N6109G

Order this documentMOTOROLAby 2N6107/DSEMICONDUCTOR TECHNICAL DATA2N6057 thru 2N6059(See 2N6050)Complementary Silicon PlasticPNPPower Transistors 2N6107. . . designed for use in generalpurpose amplifier and switching applications.2N6109* DC Current Gain Specified to 7.0 AmpereshFE = 30150 @ IC = 3.0 Adc 2N6111, 2N6288hFE = 2.3 (Min) @ IC = 7.0 Adc All

 8.2. Size:70K  central
2n6107 2n6109 2n6111 2n6288 2n6290 2n6292.pdf

2N6109G

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 8.3. Size:241K  onsemi
2n6107 2n6109 2n6111 2n6288 2n6292.pdf

2N6109G
2N6109G

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

 8.4. Size:101K  bocasemi
2n6106 2n6107 2n6108 2n6109 2n6110 2n6111 2n6288 2n6289 2n6290 2n6291 2n6292 2n6293 2n6473 2n6474 2n6475 2n6476.pdf

2N6109G
2N6109G

Boca Semiconductor Corp. BSC http://www.bocasemi.comhttp://www.bocasemi.com

 8.5. Size:249K  cdil
2n6109.pdf

2N6109G
2N6109G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N61092N6109 PNP PLASTIC POWER TRANSISTORGeneral Purpose Amplifier and Switching ApplicationPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.EBFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E 1.15 1.401 2 3F 3.75

 8.6. Size:197K  inchange semiconductor
2n6109.pdf

2N6109G
2N6109G

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6109DESCRIPTIONDC Current Gain-: h = 30-150@ I = -2.5AFE CCollector-Emitter Sustaining Voltage-: V = -50V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATIN

 8.7. Size:121K  inchange semiconductor
2n6107 2n6109 2n6111.pdf

2N6109G
2N6109G

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6107 2N6109 2N6111 DESCRIPTION With TO-220 package Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 B

Другие транзисторы... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

 

 
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