2N6284G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6284G 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 160 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 20 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4 MHz
Capacitancia de salida (Cc): 400 pF
Ganancia de corriente contínua (hFE): 750
Encapsulados: TO3
Búsqueda de reemplazo de 2N6284G
- Selecciónⓘ de transistores por parámetros
2N6284G datasheet
2n6284g 2n6284g 2n6287g.pdf
2N6284 (NPN); 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general-purpose amplifier and low-frequency switching applications. http //onsemi.com Features 20 AMPERE High DC Current Gain @ IC = 10 Adc - COMPLEMENTARY SILICON hFE = 2400 (Typ) - 2N6284 POWER TRANSISTORS = 4000 (Typ) - 2N6287 100 VOLTS, 1
2n6282 2n6283 2n6284 2n6285 2n6286 2n6287.pdf
Order this document MOTOROLA by 2N6282/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6282 Darlington Complementary thru Silicon Power Transistors . . . designed for general purpose amplifier and low frequency switching applica- 2N6284* tions. PNP High DC Current Gain @ IC = 10 Adc 2N6285 hFE = 2400 (Typ) 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) 2N6285, 2N6286, 2N6287
2n6284 2n6287.pdf
2N6284 2N6287 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT 2 DESCRIPTION The 2N6284 is a silicon epitaxial-base NPN TO-3 power transistor in monolithic Darlington configuration moun
2n6282 2n6283 2n6284.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6282 2N6283 2N6284 DESCRIPTION With TO-3 package Complement to type 2N6285/6286/6287 High DC current gain DARLINGTON APPLICATIONS For use in general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and
Otros transistores... 2N6109G, 2N6111G, 2N6193ALCC4, 2N6193LCC4, 2N6235X, 2N6249T1, 2N6250T1, 2N6251T1, BD333, 2N6286G, 2N6287G, 2N6288G, 2N6292G, 2N6299SMD, 2N6299SMD05, 2N6301SMD, 2N6301SMD05
History: BD662
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
tip107 | 2n5457 | k3568 | 2sc1344 | cs840f | 2n3053 equivalent | 2n3569 | 2sd667



