2N6287G Datasheet. Equivalente

 ..1. Size:135K  onsemi
 2n6284g 2n6284g 2n6287g.pdf

2N6284 (NPN); 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general-purpose amplifier and low-frequency switching applications. http //onsemi.com Features 20 AMPERE High DC Current Gain @ IC = 10 Adc - COMPLEMENTARY SILICON hFE = 2400 (Typ) - 2N6284 POWER TRANSISTORS = 4000 (Typ) - 2N6287 100 VOLTS, 1

 ..2. Size:135K  onsemi
 2n6287g.pdf

2N6284 (NPN); 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general-purpose amplifier and low-frequency switching applications. http //onsemi.com Features 20 AMPERE High DC Current Gain @ IC = 10 Adc - COMPLEMENTARY SILICON hFE = 2400 (Typ) - 2N6284 POWER TRANSISTORS = 4000 (Typ) - 2N6287 100 VOLTS, 1

 8.1. Size:214K  motorola
 2n6282 2n6283 2n6284 2n6285 2n6286 2n6287.pdf

Order this document MOTOROLA by 2N6282/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6282 Darlington Complementary thru Silicon Power Transistors . . . designed for general purpose amplifier and low frequency switching applica- 2N6284* tions. PNP High DC Current Gain @ IC = 10 Adc 2N6285 hFE = 2400 (Typ) 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) 2N6285, 2N6286, 2N6287

 8.2. Size:49K  st
 2n6284 2n6287.pdf

2N6284 2N6287 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT 2 DESCRIPTION The 2N6284 is a silicon epitaxial-base NPN TO-3 power transistor in monolithic Darlington configuration moun

 8.3. Size:174K  aeroflex
 2n6286 2n6287.pdf

PNP Darlington Power Silicon Transistor 2N6286 & 2N6287 Features Available in JANTX, and JANTXV per MIL-PRF-19500/505 TO-3 (TO-204AA) Package Maximum Ratings Ratings Symbol 2N6286 2N6287 Units Collector - Emitter Voltage VCEO -80 -100 Vdc Collector - Base Voltage VCBO -80 -100 Vdc Emitter - Base Voltage VEBO -7.0 Vdc Base Current IB -0.5 Adc Collector Current IC -20 Adc (1

 8.4. Size:195K  inchange semiconductor
 2n6287.pdf

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6287 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 750 (Min) @ I = -10 Adc FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to type 2N6284 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Intende

 8.5. Size:118K  inchange semiconductor
 2n6285 2n6286 2n6287.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6285 2N6286 2N6287 DESCRIPTION With TO-3 package Complement to type 2N6282/6283/6284 High DC current gain DARLINGTON APPLICATIONS For use in general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and