2N6287G Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6287G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 160 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 600 pF
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO3
2N6287G Transistor Equivalent Substitute - Cross-Reference Search
2N6287G Datasheet (PDF)
2n6284g 2n6284g 2n6287g.pdf
2N6284 (NPN); 2N6286,2N6287 (PNP)Preferred Device Darlington ComplementarySilicon Power TransistorsThese packages are designed for general-purpose amplifier andlow-frequency switching applications.http://onsemi.comFeatures20 AMPERE High DC Current Gain @ IC = 10 Adc -COMPLEMENTARY SILICONhFE = 2400 (Typ) - 2N6284POWER TRANSISTORS= 4000 (Typ) - 2N6287100 VOLTS, 1
2n6287g.pdf
2N6284 (NPN); 2N6286,2N6287 (PNP)Preferred Device Darlington ComplementarySilicon Power TransistorsThese packages are designed for general-purpose amplifier andlow-frequency switching applications.http://onsemi.comFeatures20 AMPERE High DC Current Gain @ IC = 10 Adc -COMPLEMENTARY SILICONhFE = 2400 (Typ) - 2N6284POWER TRANSISTORS= 4000 (Typ) - 2N6287100 VOLTS, 1
2n6282 2n6283 2n6284 2n6285 2n6286 2n6287.pdf
Order this documentMOTOROLAby 2N6282/DSEMICONDUCTOR TECHNICAL DATANPN2N6282Darlington ComplementarythruSilicon Power Transistors. . . designed for generalpurpose amplifier and lowfrequency switching applica-2N6284*tions.PNP High DC Current Gain @ IC = 10 Adc 2N6285hFE = 2400 (Typ) 2N6282, 2N6283, 2N6284hFE = 4000 (Typ) 2N6285, 2N6286, 2N6287
2n6284 2n6287.pdf
2N62842N6287COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT 2DESCRIPTION The 2N6284 is a silicon epitaxial-base NPNTO-3power transistor in monolithic Darlingtonconfiguration moun
2n6286 2n6287.pdf
PNP Darlington Power Silicon Transistor2N6286 & 2N6287Features Available in JANTX, and JANTXV per MIL-PRF-19500/505 TO-3 (TO-204AA) PackageMaximum RatingsRatings Symbol 2N6286 2N6287 UnitsCollector - Emitter Voltage VCEO -80 -100 VdcCollector - Base Voltage VCBO -80 -100 VdcEmitter - Base Voltage VEBO -7.0 VdcBase Current IB -0.5 AdcCollector Current IC -20 Adc(1
2n6287.pdf
INCHANGE Semiconductorisc Silicon PNP Darlingtion Power Transistor 2N6287DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 750 (Min) @ I = -10 AdcFE CCollector-Emitter Sustaining Voltage-V = -100V(Min)CEO(SUS)Complement to type 2N6284Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIntende
2n6285 2n6286 2n6287.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6285 2N6286 2N6287 DESCRIPTION With TO-3 package Complement to type 2N6282/6283/6284 High DC current gain DARLINGTON APPLICATIONS For use in general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
