2SCR514PFRA Todos los transistores

2SCR514P 2SCR514PFRA Datasheet NPN 0.7A 80V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO 80V Base IC Collector 0.7A Emitter 2SCR514PFRA 2SCR514P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SAR514P 2SAR514PFRA 3) Low VCE(sat) VCE(sat)=0.30V(Max.) (IC/IB=300mA/15mA) 4) Lead Free/RoHS

2SCR514R Datasheet NPN 0.7A 80V Middle Power Transistor lOutline l Parameter Value TSMT3 VCEO 80V IC 0.7A SOT-346T SC-96 lFeatures l 1)Suitable for Middle Power Driver lInner circuit l 2)Complementary PNP Types 2SAR514R 1)Low saturation voltage, typically VCE(sat)=300mV(Max.) (IC/ IB=300mA/15mA) l

2SCR513P5 Datasheet Medium Power Transistors (50V / 1V) lOutline l SOT-89 Parameter Value SC-62 VCEO 50V IC 1A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat)=-0.35V(Max.) (IC/IB=500mA/25mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specifi

2SCR513P Datasheet NPN 1.0A 50V Middle Power Transistor lOutline MPT3 Parameter Value VCEO 50V Base IC 1.0A Collector Emitter 2SCR513P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SAR513P 3) Low VCE(sat) VCE(sat)=0.35V(Max.) (IC/IB=500mA/25mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications Moto

2SCR512R Datasheet NPN 2.0A 30V Middle Power Transistor lOutline l Parameter Value TSMT3 VCEO 30V IC 2A SOT-346T SC-96 lFeatures l 1)Suitable for Middle Power Driver lInner circuit l 2)Complementary PNP Types 2SAR512R 3)Low VCE(sat) VCE(sat)=400mV(Max.) (IC/IB=700mA/35mA) lApplication l LOW FREQ

2SCR513R Datasheet NPN 1.0A 50V Middle Power Transistor lOutline l Parameter Value TSMT3 VCEO 50V IC 1A SOT-346T SC-96 lFeatures l 1)Suitable for Middle Power Driver lInner circuit l 2)Complementary PNP Types 2SAR513R 3)Low VCE(sat) VCE(sat)=350mV (Max.) (IC/IB=500mA/25mA) lApplication l LOW FRE

2SCR512P5 Datasheet Midium Power Transistors (30V / 2V) lOutline l SOT-89 Parameter Value SC-62 VCEO 30V IC 2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat)=0.4V(Max.) (IC/IB=700mA/35mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specifica

2SCR513P 2SCR513PFRA Datasheet NPN 1.0A 50V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO 50V Base IC 1.0A Collector Emitter 2SCR513PFRA 2SCR513P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SAR513P 2SAR513PFRA 3) Low VCE(sat) VCE(sat)=0.35V(Max.) (IC/IB=500mA/25mA) 4) Lead Free/RoHS

Midium Power Transistors (30V / 2A) 2SCR512P Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 700mA / 35mA) (1) (2) (3) 2) High speed switching Applications Abbreviated symbol NB Driver Packaging specifications Inner circuit (Unit mm) Package Taping

2SCR512P 2SCR512PFRA Datasheet NPN 2.0A 30V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO 30V Base IC 2.0A Collector Emitter 2SCR512PFRA 2SCR512P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SAR512P 2SAR512PFRA 3) Low VCE(sat) VCE(sat)=0.40V(Max.) (IC/IB=700mA/35mA) 4) Lead Free/RoHS