Биполярный транзистор 2SCR514PFRA - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SCR514PFRA
Маркировка: ND
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.7 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 320 MHz
Ёмкость коллекторного перехода (Cc): 6 pf
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SOT89
Аналоги (замена) для 2SCR514PFRA
2SCR514PFRA Datasheet (PDF)
2scr514pfra.pdf
2SCR514P2SCR514PFRADatasheetNPN 0.7A 80V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO80VBase IC Collector 0.7AEmitter 2SCR514PFRA2SCR514P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR514P2SAR514PFRA3) Low VCE(sat)VCE(sat)=0.30V(Max.)(IC/IB=300mA/15mA)4) Lead Free/RoHS
2scr514p.pdf
2SCR514PDatasheetMiddle Power Transistors (80V / 700mA)lOutlinel SOT-89 Parameter Value SC-62 VCEO80VIC0.7AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=300mV (Max.) (IC/IB=300mA/15mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING
2scr514r.pdf
2SCR514RDatasheetNPN 0.7A 80V Middle Power TransistorlOutlinelParameter Value TSMT3VCEO80VIC0.7ASOT-346TSC-96 lFeaturesl1)Suitable for Middle Power DriverlInner circuitl2)Complementary PNP Types:2SAR514R1)Low saturation voltage, typicallyVCE(sat)=300mV(Max.)(IC/ IB=300mA/15mA)l
2scr513p5.pdf
2SCR513P5DatasheetMedium Power Transistors (50V / 1V)lOutlinel SOT-89 Parameter Value SC-62 VCEO50VIC1AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=-0.35V(Max.)(IC/IB=500mA/25mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specifi
2scr513p.pdf
2SCR513PDatasheetNPN 1.0A 50V Middle Power TransistorlOutline MPT3Parameter ValueVCEO50VBase IC1.0A Collector Emitter 2SCR513P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR513P3) Low VCE(sat)VCE(sat)=0.35V(Max.)(IC/IB=500mA/25mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplicationsMoto
2scr512r.pdf
2SCR512RDatasheetNPN 2.0A 30V Middle Power TransistorlOutlinelParameter Value TSMT3VCEO30VIC2ASOT-346TSC-96 lFeaturesl1)Suitable for Middle Power DriverlInner circuitl2)Complementary PNP Types:2SAR512R3)Low VCE(sat)VCE(sat)=400mV(Max.)(IC/IB=700mA/35mA)lApplicationlLOW FREQ
2scr513r.pdf
2SCR513RDatasheetNPN 1.0A 50V Middle Power TransistorlOutlinelParameter Value TSMT3VCEO50VIC1ASOT-346TSC-96 lFeaturesl1)Suitable for Middle Power DriverlInner circuitl2)Complementary PNP Types:2SAR513R3)Low VCE(sat)VCE(sat)=350mV (Max.)(IC/IB=500mA/25mA)lApplicationlLOW FRE
2scr512p5.pdf
2SCR512P5DatasheetMidium Power Transistors (30V / 2V)lOutlinel SOT-89 Parameter Value SC-62 VCEO30VIC2AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=0.4V(Max.)(IC/IB=700mA/35mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specifica
2scr513pfra.pdf
2SCR513P2SCR513PFRADatasheetNPN 1.0A 50V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO50VBase IC1.0A Collector Emitter 2SCR513PFRA2SCR513P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR513P2SAR513PFRA3) Low VCE(sat)VCE(sat)=0.35V(Max.)(IC/IB=500mA/25mA)4) Lead Free/RoHS
2scr512p.pdf
Midium Power Transistors (30V / 2A) 2SCR512P Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = 0.4V (Max.) (IC / IB= 700mA / 35mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : NBDriver Packaging specifications Inner circuit (Unit : mm)Package Taping
2scr512pfra.pdf
2SCR512P2SCR512PFRADatasheetNPN 2.0A 30V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO30VBase IC2.0A Collector Emitter 2SCR512PFRA2SCR512P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR512P2SAR512PFRA3) Low VCE(sat)VCE(sat)=0.40V(Max.)(IC/IB=700mA/35mA)4) Lead Free/RoHS
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050