2SCR562F3 Datasheet. Equivalente

 ..1. Size:1514K  rohm
 2scr562f3.pdf

2SCR562F3 Datasheet NPN 6.0A 30V Middle Power Transistor lOutline l DFN2020-3S Parameter Value VCEO 30V IC 6A HUML2020L3 lFeatures lInner circuit l l 1) Suitable for Middle Power Driver. 2) Low VCE(sat) VCE(sat)=220mV(Max.). (IC/IB=3A/150mA) 3) High collector current. IC=6A(max),ICP=7A(max) 4) Leadless small SMD package (HUML2020L3) Excellent thermal and electrical conduct

 9.1. Size:1546K  rohm
 2scr554pfra.pdf

2SCR554P FRA Datasheet Middle Power Transistor (80V / 1.5A) AEC-Q101 Qualified lOutline l SOT-89 Parameter Value SC-62 VCEO 80V IC 1.5A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=300mV(Max.) (IC/IB=500mA/25mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITC

 9.2. Size:1815K  rohm
 2scr554p5.pdf

2SCR554P5 Datasheet Middle Power Transistors (80V / 1.5A) lOutline l SOT-89 Parameter Value SC-62 VCEO 80V IC 1.5A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=300mV(Max.) (IC/IB=500mA/25mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging speci

 9.3. Size:491K  rohm
 2scr542d.pdf

Midium Power Transistors (30V / 5A) 2SCR542D Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor CPT3 (SC-63) Features 1) Low saturation voltage VCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA) 2) High speed switching 9 (1) Base Applications (2) Collector (3) Emitter Driv

 9.4. Size:1313K  rohm
 2scr552pfra.pdf

2SCR552P 2SCR552PFRA Datasheet NPN 3.0A 30V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO 30V Base Collector IC 3.0A Emitter 2SCR552PFRA 2SCR552P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SAR552P 2SAR552PFRA 3) Low VCE(sat) VCE(sat)=0.40V(Max.) (IC/IB=1A/50mA) 4) Lead Free/RoHS Co

 9.5. Size:791K  rohm
 2scr574da07.pdf

2SCR574D A07 Datasheet NPN 2.0A 80V Middle Power Transistor lOutline l Parameter Value CPT VCEO 80V IC 2A 2SCR574D A07 lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary PNP Types 2SAR574D. 3) Low VCE(sat) VCE(sat)=0.30V(Max.). (IC/IB=1A/50mA) 4) Lead

 9.6. Size:238K  rohm
 2scr544p.pdf

Midium Power Transistors (80V / 2.5A) 2SCR544P Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) (1) (2) (3) 2) High speed switching Applications Abbreviated symbol NS Driver Packaging specifications Inner circuit (Unit mm) Package Taping

 9.7. Size:1584K  rohm
 2scr513p5.pdf

2SCR513P5 Datasheet Medium Power Transistors (50V / 1V) lOutline l SOT-89 Parameter Value SC-62 VCEO 50V IC 1A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat)=-0.35V(Max.) (IC/IB=500mA/25mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specifi

 9.8. Size:2014K  rohm
 2scr523m 2scr523eb 2scr523ub.pdf

2SCR523M / 2SCR523EB / 2SCR523UB Datasheet NPN 100mA 50V General Purpose Transistor lOutline l Parameter Value SOT-723 SOT-416FL VCEO 50V IC 100mA 2SCR523M 2SCR523EB (VMT3) (EMT3F) SOT-323FL 2SCR523UB (UMT3F) lFeatures lInner circui

 9.9. Size:435K  rohm
 2scr554r.pdf

Midium Power Transistors (80V / 1.5A) 2SCR554R Features Dimensions (Unit mm) 1) Low saturation voltage, typically TSMT3 VCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 25mA) 2) High speed switching (3) (1) (2) Structure (1) Base (2) Emitter NPN Silicon epitaxial planar transistor (3) Collector Abbreviated symbol NH Applications Inner circuit Driver (3) Pa

 9.10. Size:1890K  rohm
 2scr514p.pdf

 9.11. Size:789K  rohm
 2scr574d.pdf

2SCR574D Datasheet NPN 2.0A 80V Middle Power Transistor lOutline l Parameter Value CPT VCEO 80V IC 2A 2SCR574D lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary PNP Types 2SAR574D. 3) Low VCE(sat) VCE(sat)=0.30V(Max.). (IC/IB=1A/50mA) 4) Lead Free/Ro

 9.12. Size:484K  rohm
 2scr513p.pdf

2SCR513P Datasheet NPN 1.0A 50V Middle Power Transistor lOutline MPT3 Parameter Value VCEO 50V Base IC 1.0A Collector Emitter 2SCR513P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SAR513P 3) Low VCE(sat) VCE(sat)=0.35V(Max.) (IC/IB=500mA/25mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications Moto

 9.13. Size:1789K  rohm
 2scr512r.pdf

2SCR512R Datasheet NPN 2.0A 30V Middle Power Transistor lOutline l Parameter Value TSMT3 VCEO 30V IC 2A SOT-346T SC-96 lFeatures l 1)Suitable for Middle Power Driver lInner circuit l 2)Complementary PNP Types 2SAR512R 3)Low VCE(sat) VCE(sat)=400mV(Max.) (IC/IB=700mA/35mA) lApplication l LOW FREQ

 9.14. Size:493K  rohm
 2scr543d.pdf

Midium Power Transistors (50V / 4A) 2SCR543D Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor CPT3 (SC-63) Features 1) Low saturation voltage VCE (sat) = 0.35V (Max.) (IC / IB= 2A / 100mA) 2) High speed switching 9 (1) Base Applications (2) Collector (3) Emitter Dri

 9.15. Size:1910K  rohm
 2scr533p.pdf

2SCR533P Datasheet Middle Power Transistors (50V / 3A) lOutline l SOT-89 Parameter Value SC-62 VCEO 50V IC 3A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat)=350mV(Max.) (IC/IB=1A/50mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING

 9.16. Size:1764K  rohm
 2scr513r.pdf

2SCR513R Datasheet NPN 1.0A 50V Middle Power Transistor lOutline l Parameter Value TSMT3 VCEO 50V IC 1A SOT-346T SC-96 lFeatures l 1)Suitable for Middle Power Driver lInner circuit l 2)Complementary PNP Types 2SAR513R 3)Low VCE(sat) VCE(sat)=350mV (Max.) (IC/IB=500mA/25mA) lApplication l LOW FRE

 9.17. Size:375K  rohm
 2scr553r.pdf

2SCR553R Datasheet NPN 2.0A 50V Middle Power Transistor lOutline TSMT3 Parameter Value Collector VCEO 50V Base IC 2.0A Emitter 2SCR553R lFeatures (SC-96) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SAR553R 3) Low VCE(sat) VCE(sat)=0.35V(Max.) (IC/IB=700mA/35mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications Motor driver

 9.18. Size:1814K  rohm
 2scr512p5.pdf

2SCR512P5 Datasheet Midium Power Transistors (30V / 2V) lOutline l SOT-89 Parameter Value SC-62 VCEO 30V IC 2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat)=0.4V(Max.) (IC/IB=700mA/35mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specifica

 9.19. Size:410K  rohm
 2scr502ub.pdf

2SCR502EB / 2SCR502UB Datasheet NPN 500mA 30V General Purpose Transistors lOutline EMT3F UMT3F Parameter Value Collector Collector VCEO 30V Base Base IC 500mA Emitter Emitter 2SCR502UB 2SCR502EB (SC-85) (SC-89) lFeatures 1)General Purpose. 2) Complementary PNP Types 2SAR502EB (EMT3F) / 2SAR502UB (UMT3F) 3) Large collector current Ic=max.500mA 4) Low VcE

 9.20. Size:1019K  rohm
 2scr572d3fra.pdf

2SCR572D3 FRA Datasheet NPN 5.0A 30V Power Transistor AEC-Q101 Qualified lOutline l Parameter Value DPAK VCEO 30V IC 5A TO-252 lFeatures lInner circuit l l 1) Suitable for Power Driver. 2) Complementary PNP Types 2SAR572D3 FRA. 3) Low VCE(sat) VCE(sat)=400mV(Max.). (IC/IB=2A/100mA) lApplication l LOW FREQUENCY AMPLI

 9.21. Size:486K  rohm
 2scr533d.pdf

Midium Power Transistors (50V / 3A) 2SCR533D Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor CPT3 (SC-63) Features 1) Low saturation voltage VCE (sat) = 0.35V (Max.) (IC / IB= 1A / 50mA) 2) High speed switching 9 (1) Base Applications (2) Collector (3) Emitter Driv

 9.22. Size:1671K  rohm
 2scr586d3.pdf

2SCR586D3 NPN 5.0A 80V Power Transistor Datasheet lOutline l Parameter Value DPAK VCEO 80V IC 5A TO-252 lFeatures lInner circuit l l 1) Suitable for Power Driver. 2) Complementary PNP Types 2SAR586D3. 3) Low VCE(sat) VCE(sat)=300mV(Max.). (IC/IB=2A/100mA) lApplication l LOW FREQUENCY AMPLIFIER lPackaging specificati

 9.23. Size:1581K  rohm
 2scr553p.pdf

2SCR553P Datasheet Middle Power Transistors (50V / 2A) lOutline l SOT-89 Parameter Value SC-62 VCEO 50V IC 2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat)=350mV(Max.) (IC/IB=700mA/35mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specifica

 9.24. Size:1310K  rohm
 2scr514pfra.pdf

2SCR514P 2SCR514PFRA Datasheet NPN 0.7A 80V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO 80V Base IC Collector 0.7A Emitter 2SCR514PFRA 2SCR514P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SAR514P 2SAR514PFRA 3) Low VCE(sat) VCE(sat)=0.30V(Max.) (IC/IB=300mA/15mA) 4) Lead Free/RoHS

 9.25. Size:410K  rohm
 2scr502eb 2scr502eb 2scr502ub.pdf

2SCR502EB / 2SCR502UB Datasheet NPN 500mA 30V General Purpose Transistors lOutline EMT3F UMT3F Parameter Value Collector Collector VCEO 30V Base Base IC 500mA Emitter Emitter 2SCR502UB 2SCR502EB (SC-85) (SC-89) lFeatures 1)General Purpose. 2) Complementary PNP Types 2SAR502EB (EMT3F) / 2SAR502UB (UMT3F) 3) Large collector current Ic=max.500mA 4) Low VcE

 9.26. Size:1554K  rohm
 2scr544r.pdf

2SCR544R Datasheet NPN 2.5A 80V Middle Power Transistor lOutline l Parameter Value TSMT3 VCEO 80V IC 2.5A SOT-346T SC-96 lFeatures l 1)Suitable for Middle Power Driver lInner circuit l 2)Complementary PNP Types 2SAR544R 3)Low VCE(sat) VCE(sat)=300mV(Max.) (IC/IB=1A/50mA) lApplication l LOW FREQU

 9.27. Size:792K  rohm
 2scr573d.pdf

2SCR573D Datasheet NPN 3.0A 50V Middle Power Transistor lOutline l Parameter Value CPT VCEO 50V IC 3A 2SCR573D lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary PNP Types 2SAR573D. 3) Low VCE(sat) VCE(sat)=0.35V(Max.). (IC/IB=1A/50mA) 4) Lead Free/Ro

 9.28. Size:1808K  rohm
 2scr544p5.pdf

2SCR544P5 Datasheet Midium Power Transistors (80V / 2.5A) lOutline l SOT-89 Parameter Value SC-62 VCEO 80V IC 2.5A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=300mV(Max.) (IC/ IB=1A/50mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specifi

 9.29. Size:1805K  rohm
 2scr533p5.pdf

2SCR533P5 Datasheet Middle Power Transistors (50V / 3A) lOutline l SOT-89 Parameter Value SC-62 VCEO 50V IC 3A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat)=350mV(Max.) (IC/IB=1A/50mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specificati

 9.30. Size:1308K  rohm
 2scr513pfra.pdf

2SCR513P 2SCR513PFRA Datasheet NPN 1.0A 50V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO 50V Base IC 1.0A Collector Emitter 2SCR513PFRA 2SCR513P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SAR513P 2SAR513PFRA 3) Low VCE(sat) VCE(sat)=0.35V(Max.) (IC/IB=500mA/25mA) 4) Lead Free/RoHS

 9.31. Size:1418K  rohm
 2scr502u3hzg.pdf

2SCR502U3 HZG Datasheet NPN 500mA 30V General purpose transistors AEC-Q101 Qualified lOutline l SOT-323 Parameter Value SC-70 VCEO 30V IC 0.5A UMT3 lFeatures lInner circuit l l 1)General purpose. 2)Complementary PNP types 2SAR502U3 HZG (UMT3) 3)Collector current is large. 4)Low VCE(sat). lApplication l LOW FREQUENCY AMPLIF

 9.32. Size:1540K  rohm
 2scr553pfra.pdf

2SCR553P FRA Datasheet Middle Power Transistor (50V / 2A) AEC-Q101 Qualified lOutline l SOT-89 Parameter Value SC-62 VCEO 50V IC 2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat)=350mV(Max.) (IC/IB=700mA/35mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHIN

 9.33. Size:1014K  rohm
 2scr574d3fra.pdf

2SCR574D3 FRA Datasheet NPN 2.0A 80V Power Transistor AEC-Q101 Qualified lOutline l Parameter Value DPAK VCEO 80V IC 2A TO-252 lFeatures lInner circuit l l 1) Suitable for Power Driver. 2) Complementary PNP Types 2SAR574D3 FRA. 3) Low VCE(sat) VCE(sat)=300mV(Max.). (IC/IB=1A/50mA) lApplication l LOW FREQUENCY AMPLIF

 9.34. Size:1743K  rohm
 2scr514r.pdf

2SCR514R Datasheet NPN 0.7A 80V Middle Power Transistor lOutline l Parameter Value TSMT3 VCEO 80V IC 0.7A SOT-346T SC-96 lFeatures l 1)Suitable for Middle Power Driver lInner circuit l 2)Complementary PNP Types 2SAR514R 1)Low saturation voltage, typically VCE(sat)=300mV(Max.) (IC/ IB=300mA/15mA) l

 9.35. Size:1681K  rohm
 2scr573d3.pdf

2SCR573D3 Datasheet NPN 3.0A 50V Power Transistor lOutline l Parameter Value DPAK VCEO 50V IC 3A TO-252 lFeatures lInner circuit l l 1) Suitable for Power Driver. 2) Complementary PNP Types 2SAR573D3. 3) Low VCE(sat) VCE(sat)=350mV(Max.). (IC/IB=1A/50mA) lApplication l LOW FREQUENCY AMPLIFIER lPackaging specificatio

 9.36. Size:1513K  rohm
 2scr542pfra.pdf

2SCR542PFRA 2SCR542P Data Sheet NPN 5.0A 30V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO 30V Base IC Collector 5.0A Emitter 2SCR542PFRA 2SCR542P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2SAR542PFRA 2) Complementary PNP Types 2SAR542P 3) Low VCE(sat) VCE(sat)=0.4V Max. (IC/IB=2A/100mA) 4) Lead Free/RoHS Compliant

 9.37. Size:787K  rohm
 2scr572d.pdf

2SCR572D Datasheet NPN 5.0A 30V Middle Power Transistor lOutline l Parameter Value CPT VCEO 30V IC 5A 2SCR572D lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary PNP Types 2SAR572D. 3) Low VCE(sat) VCE(sat)=0.40V(Max.). (IC/IB=2A/100mA) 4) Lead Free/R

 9.38. Size:1479K  rohm
 2scr542f3.pdf

2SCR542F3 Datasheet NPN 3.0A 30V Middle Power Transistor lOutline l Parameter Value HUML2020L3 VCEO 30V IC 3A 2SCR542F3 lFeatures l lInner circuit l 1) Suitable for Middle Power Driver. 2) Low VCE(sat) VCE(sat)=0.20V(Max.). (IC/IB=1A/50mA) 3) High collector current. IC=3A(max),ICP=6A(m

 9.39. Size:237K  rohm
 2scr512p.pdf

Midium Power Transistors (30V / 2A) 2SCR512P Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 700mA / 35mA) (1) (2) (3) 2) High speed switching Applications Abbreviated symbol NB Driver Packaging specifications Inner circuit (Unit mm) Package Taping

 9.40. Size:418K  rohm
 2scr544d.pdf

Midium Power Transistors (80V / 2.5A) 2SCR544D Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor CPT3 6.5 5.1 2.3 0.5 Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 0.75 2) High speed switching 0.65 0.9 2.3 2.3 (1) (2) (3) 0.5 1.0 Applications Driver Packaging specifications Inner

 9.41. Size:1992K  rohm
 2scr502eb 2scr502ub.pdf

2SCR502EB / 2SCR502UB Datasheet NPN 500mA 30V General purpose transistors lOutline l Parameter Value EMT3F UMT3F VCEO 30V IC 0.5A 2SCR502EB 2SCR502UB SOT-416FL SOT-323FL lFeatures l 1)General purpose. lInner circuit l 2)Complementary PNP types 2SAR502EB(EMT3F)/2SAR

 9.42. Size:1314K  rohm
 2scr512pfra.pdf

2SCR512P 2SCR512PFRA Datasheet NPN 2.0A 30V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO 30V Base IC 2.0A Collector Emitter 2SCR512PFRA 2SCR512P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SAR512P 2SAR512PFRA 3) Low VCE(sat) VCE(sat)=0.40V(Max.) (IC/IB=700mA/35mA) 4) Lead Free/RoHS

 9.43. Size:1825K  rohm
 2scr542p.pdf

2SCR542P Datasheet Middle Power Transistor (30V / 5A) lOutline l SOT-89 Parameter Value SC-62 VCEO 30V IC 5A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=400mV(Max.) (IC/IB=2A/100mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specification

 9.44. Size:1654K  rohm
 2scr572d3.pdf

2SCR572D3 NPN 5.0A 30V Power Transistor Datasheet lOutline l Parameter Value DPAK VCEO 30V IC 5A TO-252 lFeatures lInner circuit l l 1) Suitable for Power Driver. 2) Complementary PNP Types 2SAR572D3. 3) Low VCE(sat) VCE(sat)=400mV(Max.). (IC/IB=2A/100mA) lApplication l LOW FREQUENCY AMPLIFIER lPackaging specificati

 9.45. Size:1513K  rohm
 2scr544pfra.pdf

2SCR544P 2SCR544PFRA Data Sheet NPN 2.5A 80V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO 80V Base Collector IC 2.5A Emitter 2SCR544PFRA 2SCR544P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SAR544P 2SAR544PFRA 3) Low VCE(sat) VCE(sat)=0.4V Max. (IC/IB=1A/50mA) 4) Lead Free/RoHS Compliant

 9.46. Size:1815K  rohm
 2scr543r.pdf

2SCR543R Datasheet NPN 3.0A 50V Middle Power Transistor lOutline l SOT-346T Parameter Value SC-96 VCEO 50V IC 3A TSMT3 lFeatures lInner circuit l l 1)Suitable for Middle Power Transistor 2) Complementary PNP Types 2SAR543R 3) Low saturation voltage, typically VCE(sat)=350mV(Max.) (IC/IB=2A/100mA) lApplication l LOW FREQUEN

 9.47. Size:1548K  rohm
 2scr533pfra.pdf

2SCR533P FRA Datasheet Middle Power Transistor (50V / 3A) AEC-Q101 Qualified lOutline l SOT-89 Parameter Value SC-62 VCEO 50V IC 3A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat)=350mV(Max.) (IC/IB=1A/50mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING

 9.48. Size:167K  rohm
 2scr523eb.pdf

General purpose transistor(50V,0.1A) 2SCR523M / 2SCR523EB / 2SCR523UB Structure Dimensions (Unit mm) NPN silicon epitaxial planar transistor VMT3 Features 1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB. Abbreviated symbol NB Applications Switch, LED driver EMT3F (3) Packaging specifications Package VMT3 EMT3F UMT3F (1) (2) Packaging Type Taping Tapi

 9.49. Size:236K  rohm
 2scr552p.pdf

Midium Power Transistors (30V / 3A) 2SCR552P Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 1A / 50mA) (1) (2) (3) 2) High speed switching Applications Abbreviated symbol NF Driver Packaging specifications Inner circuit (Unit mm) Package Taping (

 9.50. Size:796K  rohm
 2scr573da08.pdf

2SCR573D A08 Datasheet NPN 3.0A 50V Middle Power Transistor lOutline l Parameter Value CPT VCEO 50V IC 3A 2SCR573D A08 lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary PNP Types 2SAR573D. 3) Low VCE(sat) VCE(sat)=0.35V(Max.). (IC/IB=1A/50mA) 4) Lead

 9.51. Size:239K  rohm
 2scr554p.pdf

Midium Power Transistors (80V / 1.5A) 2SCR554P Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 25mA) (1) (2) (3) 2) High speed switching Applications Abbreviated symbol NH Driver Packaging specifications Inner circuit (Unit mm) (2) Package

 9.52. Size:166K  rohm
 2scr522eb.pdf

General purpose transistor(20V,0.2A) 2SCR522M / 2SCR522EB / 2SCR522UB Structure Dimensions (Unit mm) NPN silicon epitaxial planar transistor VMT3 Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Abbreviated symbol NC Applications Switch, LED driver EMT3F (3) Packaging specifications Package VMT3 EMT3F UMT3F (1) (2) Packaging Type Taping Tapin

 9.53. Size:264K  inchange semiconductor
 2scr542d.pdf

isc Silicon NPN Power Transistors 2SCR542D DESCRIPTION DC Current Gain h 200-500@ I = 0.5A FE C Collector-Emitter Breakdown Voltage V = 30V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

 9.54. Size:213K  inchange semiconductor
 2scr586d.pdf

isc Silicon NPN Power Transistor 2SCR586D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V 0.3V@(I =2A,I =100mA) CE(sat) C B Complementary NPN types 2SAR586D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 9.55. Size:213K  inchange semiconductor
 2scr574d.pdf

isc Silicon NPN Power Transistor 2SCR574D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V =0.3V(max)@(I =1A,I =50mA) CE(sat) C B Complementary NPN types 2SAR574D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 9.56. Size:213K  inchange semiconductor
 2scr573d.pdf

isc Silicon NPN Power Transistor 2SCR573D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V =0.35V@(I =1A,I =50mA) CE(sat) C B Complementary NPN types 2SAR573D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

 9.57. Size:212K  inchange semiconductor
 2scr572d.pdf

isc Silicon NPN Power Transistor 2SCR572D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V =0.4V@(I =2A,I =0.1A) CE(sat) C B Complementary NPN types 2SAR572D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL