30A02MH-TL-E Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 30A02MH-TL-E
Código: AL
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 520 MHz
Capacitancia de salida (Cc): 4.7 pF
Ganancia de corriente contínua (hFE): 200
Encapsulados: SOT323
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30A02MH-TL-E datasheet
30a02mh.pdf
Ordering number ENN7359 30A02MH PNP Epitaxial Planar Silicon Transistor 30A02MH Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency Amplifier, high-speed switching, unit mm small motor drive. 2194A [30A02MH] 0.3 Features 0.15 Large current capacitance. 3 Low collector-to-emitter saturation voltage (resistance). RC
30a02mh.pdf
Ordering number EN7359A 30A02MH Bipolar Transistor http //onsemi.com ( ) 30V, 0.7A, Low VCE sat PNP Single MCPH3 Applications Low-frequency Amplifier, high-speed switching small motor drive Features Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ=580m [IC=0.7A, IB=35mA] Small ON-resistance (Ron) Specificatio
30a02mh 30a02mh 30a02mh 30a02mh.pdf
Ordering number EN7359A 30A02MH Bipolar Transistor http //onsemi.com ( ) 30V, 0.7A, Low VCE sat PNP Single MCPH3 Applications Low-frequency Amplifier, high-speed switching small motor drive Features Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ=580m [IC=0.7A, IB=35mA] Small ON-resistance (Ron) Specificatio
Otros transistores... 1DI50K-055, 1DI50MA-050, 1DI75E-055, 1DI75E-100, 1DI75F-055, 1DI75F-100, 1SC1383, 30A02CH-TL-E, 2N3055, 30A02MH-TL-H, 30C02CH-TL-E, 30C02MH-TL-E, 30C02MH-TL-H, 4N1815PGP, 4N772GP, 4SCG110, 4SCG120K
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