30C02CH-TL-E
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 30C02CH-TL-E
Código: CL
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.7
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.7
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 540
MHz
Capacitancia de salida (Cc): 3.3
pF
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta:
TO236
Búsqueda de reemplazo de transistor bipolar 30C02CH-TL-E
30C02CH-TL-E
Datasheet (PDF)
7.1. Size:47K sanyo
30c02ch.pdf
Ordering number : ENN736330C02CHNPN Epitaxial Planar Silicon Transistor30C02CHLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifier, high-speed switching,unit : mmsmall motor drive.2150A[30C02CH]Features2.9 Large current capacitance.0.150.4 Low collector-to-emitter saturation voltage (resistance).
7.2. Size:461K onsemi
30c02ch.pdf
Ordering number : EN7363A30C02CHBipolar Transistorhttp://onsemi.com( )30V, 0.7A, Low VCE sat NPN Single CPH3Applications Low-frequency Amplifier, high-speed switching, small motor drive Features Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ.=330m [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturizatio
9.1. Size:29K sanyo
30c02s.pdf
Ordering number : ENN736530C02SNPN Epitaxial Planar Silicon Transistor30C02SLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifier, high-speed switching,unit : mmsmall motor drive.2106A[30C02S]Features0.750.3 Large current capacitance.0.63Low collector-to-emitter saturation voltage (resistance).
9.2. Size:273K onsemi
30c02mh 30c02mh 30c02mh 30c02mh.pdf
Ordering number : EN7364B30C02MHBipolar Transistorhttp://onsemi.com( )30V, 0.7A, Low VCE sat NPN Single MCPH3Applications Low-frequency Amplifier, high-speed switching, small motor driveFeatures Large current capacity Low collector-to-emitter saturation voltage (resistance)) : RCE(sat) typ=330m [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturizat
9.3. Size:363K onsemi
30c02mh.pdf
Ordering number : EN7364B30C02MHBipolar Transistorhttp://onsemi.com( )30V, 0.7A, Low VCE sat NPN Single MCPH3Applications Low-frequency Amplifier, high-speed switching, small motor driveFeatures Large current capacity Low collector-to-emitter saturation voltage (resistance)) : RCE(sat) typ=330m [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturizat
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