8050C
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 8050C
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 25
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar 8050C
8050C
Datasheet (PDF)
..1. Size:134K semtech
8050b 8050c 8050d 8050e.pdf 
8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit
..2. Size:189K semtech
8050c 8050d.pdf
8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit
..3. Size:263K sunroc
8050c.pdf
SUNROC8050C TRANSISTOR(NPN) MAXIMUM RATINGS(Ta=25 unless otherwise noted) 1. EMITTER Symbol Parameter Value UnitsCollector-Base Voltage 2. BASE VCBO 40 VCollector-Emitter Voltage VCEO 25 V3. COLLECTOR Emitter-Base Voltage VEBO 5 VCollector Current IC 0.5 ACollector Power Dissipation PC 625 mWJunction Temperature Tj 150 Storag Temperature -55150
0.1. Size:816K 1
cd8050b cd8050c cd8050d.pdf
Continental Device India Pvt. LimitedAn IATF 16949, ISO9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTORS CD8050TO-92Leaded PackageRoHS compliantABSOLUTE MAXIMUM RATINGS (Ta = 25 OC)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 40 VCollector -Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 6 VCollector Current IC 2 ACollector Power Dissipat
0.2. Size:222K mcc
s8050b s8050c s8050d.pdf
MCCMicro Commercial ComponentsTMS8050-B20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311S8050-CPhone: (818) 701-4933Fax: (818) 701-4939 S8050-DFeatures TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 0.5A Collector-base Voltage 40VTransistors Operating an
0.5. Size:373K semtech
mmbt8050cw mmbt8050dw.pdf
MMBT8050W (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 5 VPeak Collector Current ICM 1.5 A Total Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C OStorage Te
0.6. Size:2166K slkor
s8050b s8050c s8050d.pdf
S8050NPN General Purpose TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 40VdcEmitter-Base VOltage VEBO5.0 VdcCollector Current IC500 mAdcPD 0.625Total Device Dissipation T =25 C WAJunction Temperature T 150j CStorage, Temper
0.7. Size:488K agertech
mmbt8050c mmbt8050d.pdf
MMBT8050C/D(1.5A)Features For switching and amplifier applications Especially suitable for AF-Driver stages and lowpower output stagesAbsolute maximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 6 VCollector Current IC 1.5 APower Dissipation PD 350 mW
0.8. Size:1986K pjsemi
mmbt8050c-1.5a mmbt8050d-1.5a.pdf
MMBT8050-1.5A NPN Transistor Features SOT-23 For Switching and AF Amplifer Applications.Equivalent Circuit 1.Base 2.Emitter 3.Collector3.CollectorMarking Code : MMBT8050C-1.5A : X1 MMBT8050D-1.5A : Y11.Base2. Emitter.Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Value UnitCollector Base Voltage V 40
0.9. Size:281K cn shikues
pxt8050c pxt8050d.pdf
PXT8050NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 6 VCollector Current IC 1.5 APower Dissipation Ptot 625
0.10. Size:396K cn weida
s8050b s8050c s8050d.pdf
Jiangsu Weida Semiconductor Co., Ltd.S8050NPN General Purpose TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS(Ta=25 C)Rating Symbol Value UnitVCEOCollector-Emitter Voltage 25 VdcVCBOCollector-Base Voltage 40 VdcVEBOEmitter-Base VOltage 5.0 VdcCollector Current IC 500 mAdcPDTotal Device Dissipation T =25 C 0.625 WAJunction Te
0.11. Size:220K cn weida
ss8050b ss8050c ss8050d ss8050e.pdf
Jiangsu Weida Semiconductor Co., Ltd.SS8050NPN General Purpose TransistorsTO-92P b Lead(Pb)-Free1. EMITTER122. BASE33. COLLECTORMAXIMUM RATINGS(TA=25C unless otherwise noted)Rating Symbol Value UnitVCBO40Collector-Base Voltage VCollector-Emitter Voltage VCEO 25VVEBOEmitter-Base Voltage 5 VCollector Current-ContinuousIC A1.5Total Device Dissipation
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