8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit

8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit

SUNROC8050C TRANSISTOR(NPN) MAXIMUM RATINGS(Ta=25 unless otherwise noted) 1. EMITTER Symbol Parameter Value UnitsCollector-Base Voltage 2. BASE VCBO 40 VCollector-Emitter Voltage VCEO 25 V3. COLLECTOR Emitter-Base Voltage VEBO 5 VCollector Current IC 0.5 ACollector Power Dissipation PC 625 mWJunction Temperature Tj 150 Storag Temperature -55150

Continental Device India Pvt. LimitedAn IATF 16949, ISO9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTORS CD8050TO-92Leaded PackageRoHS compliantABSOLUTE MAXIMUM RATINGS (Ta = 25 OC)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 40 VCollector -Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 6 VCollector Current IC 2 ACollector Power Dissipat

MCCMicro Commercial ComponentsTMS8050-B20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311S8050-CPhone: (818) 701-4933Fax: (818) 701-4939 S8050-DFeatures TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 0.5A Collector-base Voltage 40VTransistors Operating an

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MMBT8050W (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 5 VPeak Collector Current ICM 1.5 A Total Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C OStorage Te

S8050NPN General Purpose TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 40VdcEmitter-Base VOltage VEBO5.0 VdcCollector Current IC500 mAdcPD 0.625Total Device Dissipation T =25 C WAJunction Temperature T 150j CStorage, Temper

MMBT8050C/D(1.5A)Features For switching and amplifier applications Especially suitable for AF-Driver stages and lowpower output stagesAbsolute maximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 6 VCollector Current IC 1.5 APower Dissipation PD 350 mW

MMBT8050-1.5A NPN Transistor Features SOT-23 For Switching and AF Amplifer Applications.Equivalent Circuit 1.Base 2.Emitter 3.Collector3.CollectorMarking Code : MMBT8050C-1.5A : X1 MMBT8050D-1.5A : Y11.Base2. Emitter.Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Value UnitCollector Base Voltage V 40

PXT8050NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 6 VCollector Current IC 1.5 APower Dissipation Ptot 625

Jiangsu Weida Semiconductor Co., Ltd.S8050NPN General Purpose TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS(Ta=25 C)Rating Symbol Value UnitVCEOCollector-Emitter Voltage 25 VdcVCBOCollector-Base Voltage 40 VdcVEBOEmitter-Base VOltage 5.0 VdcCollector Current IC 500 mAdcPDTotal Device Dissipation T =25 C 0.625 WAJunction Te

Jiangsu Weida Semiconductor Co., Ltd.SS8050NPN General Purpose TransistorsTO-92P b Lead(Pb)-Free1. EMITTER122. BASE33. COLLECTORMAXIMUM RATINGS(TA=25C unless otherwise noted)Rating Symbol Value UnitVCBO40Collector-Base Voltage VCollector-Emitter Voltage VCEO 25VVEBOEmitter-Base Voltage 5 VCollector Current-ContinuousIC A1.5Total Device Dissipation