8550C Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 8550C
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 0.625 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 150 MHz
Ganancia de corriente contínua (hFE): 120
Encapsulados: TO92
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8550C datasheet
..1. Size:129K semtech
8550c 8550d.pdf 
8550 (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base Voltage
..2. Size:192K semtech
8550b 8550c 8550d 8550e.pdf
8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Co
0.1. Size:177K mcc
s8550b s8550c s8550d.pdf
S8550-B MCC Micro Commercial Components TM S8550-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S8550-D Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. PNP Silicon Collector-current 0.5A Collector-base Voltage 40V Transistors Operating a
0.2. Size:160K onsemi
ss8550cbu ss8550cta ss8550dbu ss8550dta.pdf
DATA SHEET www.onsemi.com PNP Epitaxial Silicon Transistor TO-92-3 CASE 135AN SS8550 1 2 3 Features 2 W Output Amplifier of Portable Radios in Class B Push-Pull Operation Complementary to SS8050 TO-92-3 Collector Current IC = 1.5 A CASE 135AR 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 3 Compliant 1. Emitter 2. Base ABSOLUTE MAXIMUM
0.3. Size:237K onsemi
ss8550bbu ss8550cbu ss8550cta ss8550dbu ss8550dta.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.4. Size:814K semtech
mmbt8550c mmbt8550d.pdf
MMBT8550(1.5A) PNP Silicon Epitaxial Planar Transistor For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. As complementary type the NPN transistor MMBT8050 (1.5A) is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package O Absolute Maximum Ratings (T = 25 C) a Parameter Symbol Value Unit Collector Bas
0.5. Size:449K agertech
mmbt8550c mmbt8550d.pdf
MMBT8550C/D Features For switching and amplifier applications Especially suitable for AF-Driver stages and low power output stages As complementary type of the NPN transistor MMBT8050C/D is recommended Absolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base V
0.6. Size:857K pjsemi
mmbt8550c mmbt8550d.pdf
MMBT8550-1.5A PNP Transistor Features SOT-23 (TO-236) For Switching and Amplifier Applications. Especially Suitable for AF-Driver Stages and Low Power Output Stages. As Complementary Type of the NPN Transistor MMBT8050-1.5A is Recommended. 1.Base 2.Emitter 3.Collector Marking -C X2 -D Y2 Absolute Maximum Ratings Ratings at 25 ambient temperature unless other
0.7. Size:280K cn shikues
pxt8550c pxt8550d.pdf
PXT8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 1.5 A Power Dissipation Ptot
0.8. Size:11458K cn twgmc
pxt8550c pxt8550d pxt8550d1 pxt8550d2.pdf
PXT8550 PXT8550 PXT8550 PXT8550 TRANSISTOR (PNP) SOT-89 FEATURES Compliment to PXT8050 MARKING Y2 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO VCEO Collector-Emitter Voltage -25 V V Emitter-Base Voltage -5 V EBO I Collector Current -Continuous -1.5 A C P Collector Power
0.9. Size:221K cn weida
s8550b s8550c s8550d s8550e.pdf
Jiangsu Weida Semiconductor Co., Ltd. S8550 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR MAXIMUM RATINGS(TA=25 C unless otherwise noted) Rating Symbol Value Unit VCBO 40 Collector-Base Voltage V Collector-Emitter Voltage VCEO 25 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous IC A 1.5 Total Device Dissipation T
0.10. Size:448K cn weida
ss8550b ss8550c ss8550d ss8550e.pdf
Jiangsu Weida Semiconductor Co., Ltd. SS8550 Plastic-Encapsulate Transistors TO-92 PNP Silicon COLLECTOR 3 2 BASE 1 1. EMITTER 2 3 1 2. BASE EMITTER 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol SS8550 Unit Collector-Emitter Voltage V CEO -25 Vdc VCBO Collector-Base Voltage -40 Vdc VEBO Emitter-Base Voltage -5.0 Vdc Collector Current Adc IC -1.5 Total De
Otros transistores... 55GN01FA-TL-H, 55GN01MA, 55GN01MA-TL-E, 753DCSM, 8050C, 8050SS, 8050SS-C, 8050SS-D, BC546, 8550SS, 8550SS-C, 8550SS-D, 9012S, 9013S, B511, B562, B564A
