8550C Datasheet, Equivalent, Cross Reference Search
Type Designator: 8550C
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 0.625 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO92
8550C Transistor Equivalent Substitute - Cross-Reference Search
8550C Datasheet (PDF)
8550c 8550d.pdf
8550 (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 25 VEmitter Base Voltage
8550b 8550c 8550d 8550e.pdf
8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Co
8550c.pdf
SUNROC8550C TRANSISTOR(PNP) MAXIMUM RATINGS(Ta=25 unless otherwise noted) 1. EMITTER Symbol Parameter Value UnitsCollector-Base Voltage 2. BASE VCBO -40 VCollector-Emitter Voltage -25VCEO V3. COLLECTOR Emitter-Base Voltage VEBO -5 VCollector Current IC -0.5 ACollector Power Dissipation PC 625 mWJunction Temperature Tj 150 Storag Temperature -55150
s8550b s8550c s8550d.pdf
S8550-BMCCMicro Commercial ComponentsTMS8550-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311S8550-DPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.PNP Silicon Collector-current 0.5A Collector-base Voltage 40VTransistors Operating a
ss8550cbu ss8550cta ss8550dbu ss8550dta.pdf
DATA SHEETwww.onsemi.comPNP Epitaxial SiliconTransistorTO-92-3CASE 135ANSS8550123Features 2 W Output Amplifier of Portable Radios in Class B Push-PullOperation Complementary to SS8050TO-92-3 Collector Current: IC = 1.5 A CASE 135AR1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS23Compliant1. Emitter2. BaseABSOLUTE MAXIMUM
ss8550bbu ss8550cbu ss8550cta ss8550dbu ss8550dta.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
mmbt8550c mmbt8550d.pdf
MMBT8550(1.5A) PNP Silicon Epitaxial Planar Transistor For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. As complementary type the NPN transistor MMBT8050 (1.5A) is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package OAbsolute Maximum Ratings (T = 25 C) aParameter Symbol Value Unit Collector Bas
mmbt8550c mmbt8550d.pdf
MMBT8550C/DFeatures For switching and amplifier applications Especially suitable for AF-Driver stages and lowpower output stages As complementary type of the NPN transistorMMBT8050C/D is recommendedAbsolute maximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 25 VEmitter Base V
mmbt8550c mmbt8550d.pdf
MMBT8550-1.5A PNP Transistor FeaturesSOT-23 (TO-236) For Switching and Amplifier Applications. Especially Suitable for AF-Driver Stages and LowPower Output Stages. As Complementary Type of the NPN TransistorMMBT8050-1.5A is Recommended.1.Base 2.Emitter 3.CollectorMarking: -C: X2-D: Y2Absolute Maximum Ratings Ratings at 25 ambient temperature unless other
pxt8550c pxt8550d.pdf
PXT8550PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 25 VEmitter Base Voltage -VEBO 6 VCollector Current -IC 1.5 APower Dissipation Ptot
pxt8550c pxt8550d pxt8550d1 pxt8550d2.pdf
PXT8550PXT8550PXT8550 PXT8550 TRANSISTOR (PNP)SOT-89FEATURESCompliment to PXT8050 MARKING: Y21. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted)3. EMITTER Symbol Parameter Value UnitV Collector-Base Voltage -40 VCBOVCEO Collector-Emitter Voltage -25 VV Emitter-Base Voltage -5 VEBOI Collector Current -Continuous -1.5 ACP Collector Power
s8550b s8550c s8550d s8550e.pdf
Jiangsu Weida Semiconductor Co., Ltd. S8550NPN General Purpose TransistorsTO-92P b Lead(Pb)-Free1. EMITTER122. BASE33. COLLECTORMAXIMUM RATINGS(TA=25C unless otherwise noted)Rating Symbol Value UnitVCBO40Collector-Base Voltage VCollector-Emitter Voltage VCEO 25VVEBOEmitter-Base Voltage 5 VCollector Current-ContinuousIC A1.5Total Device Dissipation T
ss8550b ss8550c ss8550d ss8550e.pdf
Jiangsu Weida Semiconductor Co., Ltd. SS8550Plastic-Encapsulate TransistorsTO-92PNP Silicon COLLECTOR32BASE11. EMITTER 2312. BASEEMITTER3. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol SS8550 UnitCollector-Emitter Voltage VCEO -25 VdcVCBOCollector-Base Voltage -40 VdcVEBOEmitter-Base Voltage -5.0 VdcCollector CurrentAdcIC -1.5Total De
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .