BC817-40WT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BC817-40WT1G

Código: CE

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.46 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 10 pF

Ganancia de corriente contínua (hFE): 250

Encapsulados: SOT323

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BC817-40WT1G datasheet

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BC817-40WT1G

BC817-40W 45 V, 0.5 A, General Purpose NPN Transistor ON Semiconductor s BC817-40W is a General Purpose NPN Transistor that is housed in the SC-70/SOT-323 package. Features www.onsemi.com AEC-Q101 Qualified and Consult Factory for PPAP Capable This Device is Pb-Free, Halogen Free/BFR Free and is RoHS COLLECTOR Compliant 3 1 BASE MAXIMUM RATINGS (TA = 25 C) Rating Symbo

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BC817-40WT1G

LBC817-40WT1G S-LBC817-40WT1G NPN Silicon General Purpose Transistors 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Devic

 0.2. Size:170K  lrc
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BC817-40WT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. LBC817-40WT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-40WT1G 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector Emit

 3.1. Size:287K  willas
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BC817-40WT1G

FM120-M WILLAS THRU BC817-40WT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize

Otros transistores... BC817-25LT1G, BC817-25LT3G, BC817-25QA, BC817-40-G, BC817-40LG, BC817-40LT1G, BC817-40LT3G, BC817-40QA, BD139, BC817DS, BC817K-16, BC817K-16W, BC818-40LT1G, BC818K-16, BC818K-25, BC818LT1, BC818W