BC847BPDW1T3G Todos los transistores

 

BC847BPDW1T3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BC847BPDW1T3G
   Código: BF
   Material: Si
   Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.38 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT363

 Búsqueda de reemplazo de transistor bipolar BC847BPDW1T3G

 

BC847BPDW1T3G Datasheet (PDF)

 ..1. Size:177K  onsemi
bc847bpdw1t3g.pdf

BC847BPDW1T3G
BC847BPDW1T3G

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

 0.1. Size:177K  onsemi
sbc847bpdw1t3g.pdf

BC847BPDW1T3G
BC847BPDW1T3G

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

 0.2. Size:172K  lrc
lbc846bpdw1t1g lbc846bpdw1t3g lbc847bpdw1t1g lbc847bpdw1t3g lbc847cpdw1t1g lbc847cpdw1t3g lbc848bpdw1t1g lbc848bpdw1t3g lbc848cpdw1t1g lbc848cpdw1t3g.pdf

BC847BPDW1T3G
BC847BPDW1T3G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

 3.1. Size:177K  onsemi
bc847bpdw1t2g bc846bpdw1t1g.pdf

BC847BPDW1T3G
BC847BPDW1T3G

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

 3.2. Size:131K  onsemi
bc846bpdw1t1g bc847bpdw1t1g bc848cpdw1t1g.pdf

BC847BPDW1T3G
BC847BPDW1T3G

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorswww.onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Appli

 3.3. Size:177K  onsemi
bc847bpdw1t1g bc848cpdw1t1g.pdf

BC847BPDW1T3G
BC847BPDW1T3G

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

 3.4. Size:208K  onsemi
bc848cpdw1t1g bc846bpdw1t1g bc847bpdw1t1g.pdf

BC847BPDW1T3G
BC847BPDW1T3G

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorswww.onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Appli

 3.5. Size:177K  onsemi
sbc847bpdw1t1g.pdf

BC847BPDW1T3G
BC847BPDW1T3G

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

 3.6. Size:172K  lrc
lbc846bpdw1t1g lbc847bpdw1t1g lbc847cpdw1t1g lbc848bpdw1t1g lbc848cpdw1t1g.pdf

BC847BPDW1T3G
BC847BPDW1T3G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

 3.7. Size:172K  lrc
lbc847bpdw1t1g.pdf

BC847BPDW1T3G
BC847BPDW1T3G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

 3.8. Size:500K  dxc
dbc846bpdw1t1g dbc847bpdw1t1g dbc847cpdw1t1g dbc848bpdw1t1g dbc848cpdw1t1g.pdf

BC847BPDW1T3G
BC847BPDW1T3G

Dual General Purpose TransistorsDual General Purpose TransistorsNPN/PNP Duals (Complimentary)DBC846BPDW1T1GDBC847BPDW1T1G These transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isDBC847CPDW1T1Gdesigned for low power surface mount applications.DBC848BPDW1T1GWe declare that the material of product compliance wit

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