BC847BPDW1T3G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BC847BPDW1T3G

Código: BF

Material: Si

Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.38 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT363

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BC847BPDW1T3G datasheet

 ..1. Size:177K  onsemi
 bc847bpdw1t3g.pdf pdf_icon

BC847BPDW1T3G

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap

 0.1. Size:177K  onsemi
 sbc847bpdw1t3g.pdf pdf_icon

BC847BPDW1T3G

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap

 0.2. Size:172K  lrc
 lbc846bpdw1t1g lbc846bpdw1t3g lbc847bpdw1t1g lbc847bpdw1t3g lbc847cpdw1t1g lbc847cpdw1t3g lbc848bpdw1t1g lbc848bpdw1t3g lbc848cpdw1t1g lbc848cpdw1t3g.pdf pdf_icon

BC847BPDW1T3G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi

 3.1. Size:177K  onsemi
 bc847bpdw1t2g bc846bpdw1t1g.pdf pdf_icon

BC847BPDW1T3G

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap

MOSTRAR MÁS

Otros transistores... BC847BFZ, BC847B-G, BC847BLT1G, BC847BLT3G, BC847BM, BC847BMB, BC847BPDW1T1G, BC847BPDW1T2G, 2SD313, BC847BPDXV6T1G, BC847BTT1G, BC847BW-G, BC847BWR, BC847BWT1G, BC847CDW1T1G, BC847CDXV6T1G, BC847C-G