Справочник транзисторов. BC847BPDW1T3G

 

Биполярный транзистор BC847BPDW1T3G Даташит. Аналоги


   Наименование производителя: BC847BPDW1T3G
   Маркировка: BF
   Тип материала: Si
   Полярность: NPN*PNP
   Максимальная рассеиваемая мощность (Pc): 0.38 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 4.5 pf
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: SOT363
 

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BC847BPDW1T3G Datasheet (PDF)

 ..1. Size:177K  onsemi
bc847bpdw1t3g.pdfpdf_icon

BC847BPDW1T3G

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

 0.1. Size:177K  onsemi
sbc847bpdw1t3g.pdfpdf_icon

BC847BPDW1T3G

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

 0.2. Size:172K  lrc
lbc846bpdw1t1g lbc846bpdw1t3g lbc847bpdw1t1g lbc847bpdw1t3g lbc847cpdw1t1g lbc847cpdw1t3g lbc848bpdw1t1g lbc848bpdw1t3g lbc848cpdw1t1g lbc848cpdw1t3g.pdfpdf_icon

BC847BPDW1T3G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

 3.1. Size:177K  onsemi
bc847bpdw1t2g bc846bpdw1t1g.pdfpdf_icon

BC847BPDW1T3G

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

Другие транзисторы... BC847BFZ , BC847B-G , BC847BLT1G , BC847BLT3G , BC847BM , BC847BMB , BC847BPDW1T1G , BC847BPDW1T2G , BC558 , BC847BPDXV6T1G , BC847BTT1G , BC847BW-G , BC847BWR , BC847BWT1G , BC847CDW1T1G , BC847CDXV6T1G , BC847C-G .

History: 2SD1360 | MJ3584

 

 
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