BC847BPDXV6T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BC847BPDXV6T1G

Código: 4F

Material: Si

Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT563

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BC847BPDXV6T1G datasheet

 ..1. Size:114K  onsemi
 bc847bpdxv6t1g.pdf pdf_icon

BC847BPDXV6T1G

BC847BPDXV6, SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low http //onsemi.com power surface mount applications. Features (3) (2) (1) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualif

 0.1. Size:114K  onsemi
 sbc847bpdxv6t1g.pdf pdf_icon

BC847BPDXV6T1G

BC847BPDXV6, SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low http //onsemi.com power surface mount applications. Features (3) (2) (1) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualif

 1.1. Size:76K  onsemi
 bc847bpdxv6t1-d.pdf pdf_icon

BC847BPDXV6T1G

BC847BPDXV6T1, BC847BPDXV6T5 Dual General Purpose Transistor NPN/PNP Dual (Complementary) http //onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low (3) (2) (1) power surface mount applications. Lead-Free Solder Plating MAXIMUM RATINGS - NPN Q1 Q2 Rating Symbol Value Unit Collector-Emitter Vol

 3.1. Size:110K  onsemi
 bc847bpdxv6 sbc847bpdxv6.pdf pdf_icon

BC847BPDXV6T1G

BC847BPDXV6, SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low http //onsemi.com power surface mount applications. Features (3) (2) (1) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualif

MOSTRAR MÁS

Otros transistores... BC847B-G, BC847BLT1G, BC847BLT3G, BC847BM, BC847BMB, BC847BPDW1T1G, BC847BPDW1T2G, BC847BPDW1T3G, 2SD2499, BC847BTT1G, BC847BW-G, BC847BWR, BC847BWT1G, BC847CDW1T1G, BC847CDXV6T1G, BC847C-G, BC847CLT1G