BC847BPDXV6T1G Todos los transistores

 

BC847BPDXV6T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BC847BPDXV6T1G
   Código: 4F
   Material: Si
   Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT563
 

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BC847BPDXV6T1G Datasheet (PDF)

 ..1. Size:114K  onsemi
 bc847bpdxv6t1g.pdf pdf_icon

BC847BPDXV6T1G

BC847BPDXV6,SBC847BPDXV6NPN/PNP Dual GeneralPurpose TransistorThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for lowhttp://onsemi.compower surface mount applications.Features(3) (2) (1) S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualif

 0.1. Size:114K  onsemi
 sbc847bpdxv6t1g.pdf pdf_icon

BC847BPDXV6T1G

BC847BPDXV6,SBC847BPDXV6NPN/PNP Dual GeneralPurpose TransistorThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for lowhttp://onsemi.compower surface mount applications.Features(3) (2) (1) S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualif

 1.1. Size:76K  onsemi
 bc847bpdxv6t1-d.pdf pdf_icon

BC847BPDXV6T1G

BC847BPDXV6T1,BC847BPDXV6T5Dual General PurposeTransistorNPN/PNP Dual (Complementary)http://onsemi.comThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for low(3) (2) (1)power surface mount applications. Lead-Free Solder PlatingMAXIMUM RATINGS - NPNQ1 Q2Rating Symbol Value UnitCollector-Emitter Vol

 3.1. Size:110K  onsemi
 bc847bpdxv6 sbc847bpdxv6.pdf pdf_icon

BC847BPDXV6T1G

BC847BPDXV6,SBC847BPDXV6NPN/PNP Dual GeneralPurpose TransistorThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for lowhttp://onsemi.compower surface mount applications.Features(3) (2) (1) S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualif

MOSTRAR MÁS

Otros transistores... BC847B-G , BC847BLT1G , BC847BLT3G , BC847BM , BC847BMB , BC847BPDW1T1G , BC847BPDW1T2G , BC847BPDW1T3G , TIP42 , BC847BTT1G , BC847BW-G , BC847BWR , BC847BWT1G , BC847CDW1T1G , BC847CDXV6T1G , BC847C-G , BC847CLT1G .

History: NB323X | BUV296AV

 

 
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