Справочник транзисторов. BC847BPDXV6T1G

 

Биполярный транзистор BC847BPDXV6T1G Даташит. Аналоги


   Наименование производителя: BC847BPDXV6T1G
   Маркировка: 4F
   Тип материала: Si
   Полярность: NPN*PNP
   Максимальная рассеиваемая мощность (Pc): 0.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 4.5 pf
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: SOT563
 

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BC847BPDXV6T1G Datasheet (PDF)

 ..1. Size:114K  onsemi
 bc847bpdxv6t1g.pdf pdf_icon

BC847BPDXV6T1G

BC847BPDXV6,SBC847BPDXV6NPN/PNP Dual GeneralPurpose TransistorThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for lowhttp://onsemi.compower surface mount applications.Features(3) (2) (1) S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualif

 0.1. Size:114K  onsemi
 sbc847bpdxv6t1g.pdf pdf_icon

BC847BPDXV6T1G

BC847BPDXV6,SBC847BPDXV6NPN/PNP Dual GeneralPurpose TransistorThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for lowhttp://onsemi.compower surface mount applications.Features(3) (2) (1) S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualif

 1.1. Size:76K  onsemi
 bc847bpdxv6t1-d.pdf pdf_icon

BC847BPDXV6T1G

BC847BPDXV6T1,BC847BPDXV6T5Dual General PurposeTransistorNPN/PNP Dual (Complementary)http://onsemi.comThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for low(3) (2) (1)power surface mount applications. Lead-Free Solder PlatingMAXIMUM RATINGS - NPNQ1 Q2Rating Symbol Value UnitCollector-Emitter Vol

 3.1. Size:110K  onsemi
 bc847bpdxv6 sbc847bpdxv6.pdf pdf_icon

BC847BPDXV6T1G

BC847BPDXV6,SBC847BPDXV6NPN/PNP Dual GeneralPurpose TransistorThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for lowhttp://onsemi.compower surface mount applications.Features(3) (2) (1) S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualif

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Другие транзисторы... BC847B-G , BC847BLT1G , BC847BLT3G , BC847BM , BC847BMB , BC847BPDW1T1G , BC847BPDW1T2G , BC847BPDW1T3G , TIP42 , BC847BTT1G , BC847BW-G , BC847BWR , BC847BWT1G , BC847CDW1T1G , BC847CDXV6T1G , BC847C-G , BC847CLT1G .

History: GES4146 | KSC2883Y | BU922T | CP432

 

 
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