BC847CDXV6T1G. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

BC847CDXV6T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BC847CDXV6T1G

Código: 1G

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.357 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 420

Encapsulados: SOT563

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BC847CDXV6T1G datasheet

..1. Size:68K onsemi
bc848cdxv6t1g bc847cdxv6t1g.pdf pdf_icon

BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 Dual General Purpose http //onsemi.com Transistors NPN Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for Q1 Q2 low power surface mount applications. Lead-Free Solder Plating (4) (5) (6) MAXIMUM RATINGS BC847CDXV6T1 Rating Symb

..2. Size:96K onsemi
bc847cdxv6t1g bc847cdxv6t5g bc848cdxv6t1g.pdf pdf_icon

BC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G Dual General Purpose Transistors http //onsemi.com NPN Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for low power surface mount applications. Q1 Q2 Features These are Pb-Free Devices (4) (5) (6) BC847CDXV6T1 MAXIMUM RATINGS Rating Symb

..3. Size:132K onsemi
bc847cdxv6t1g bc848cdxv6t1g.pdf pdf_icon