BC847CDXV6T1G Specs and Replacement

Type Designator: BC847CDXV6T1G

SMD Transistor Code: 1G

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.357 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 420

Noise Figure, dB: -

Package: SOT563

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BC847CDXV6T1G datasheet

 ..1. Size:68K  onsemi

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BC847CDXV6T1G

BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 Dual General Purpose http //onsemi.com Transistors NPN Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for Q1 Q2 low power surface mount applications. Lead-Free Solder Plating (4) (5) (6) MAXIMUM RATINGS BC847CDXV6T1 Rating Symb... See More ⇒

 ..2. Size:96K  onsemi

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BC847CDXV6T1G

BC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G Dual General Purpose Transistors http //onsemi.com NPN Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for low power surface mount applications. Q1 Q2 Features These are Pb-Free Devices (4) (5) (6) BC847CDXV6T1 MAXIMUM RATINGS Rating Symb... See More ⇒

 ..3. Size:132K  onsemi

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BC847CDXV6T1G

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Detailed specifications: BC847BPDW1T2G, BC847BPDW1T3G, BC847BPDXV6T1G, BC847BTT1G, BC847BW-G, BC847BWR, BC847BWT1G, BC847CDW1T1G, C3198, BC847C-G, BC847CLT1G, BC847CLT3G, BC847CM, BC847CMB, BC847CTT1G, BC847CW-G, BC847CWR

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