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BC857BLT3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BC857BLT3G
   Código: 3F
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 220
   Paquete / Cubierta: SOT23
 

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BC857BLT3G Datasheet (PDF)

 ..1. Size:801K  onsemi
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BC857BLT3G

BC856ALT1G Series,SBC856ALT1G SeriesGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTER3MAXIMUM RATINGS

 0.1. Size:86K  onsemi
nsvbc857blt3g.pdf pdf_icon

BC857BLT3G

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureshttp://onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2EMITTERMAXIMUM RATINGS (TA = 25C unless other

 0.2. Size:159K  lrc
lbc856alt3g lbc856blt3g lbc857alt1g lbc857blt3g lbc857clt1g lbc858alt1g lbc858blt3g lbc858clt3g lbc859blt1g lbc859clt3g.pdf pdf_icon

BC857BLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

 0.3. Size:234K  lrc
lbc856alt1g lbc856alt3g lbc856blt1g lbc856blt3g lbc857alt1g lbc857alt1g lbc857blt1g lbc857blt3g lbc857clt1g lbc857clt1g.pdf pdf_icon

BC857BLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

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History: DTC501

 

 
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