BC857CWT1G Todos los transistores

 

BC857CWT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BC857CWT1G
   Código: 3G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 420
   Paquete / Cubierta: SOT323
 

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BC857CWT1G datasheet

 ..1. Size:81K  onsemi
bc857cwt1g bc857bwt1g.pdf pdf_icon

BC857CWT1G

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

 ..2. Size:78K  onsemi
bc856bwt1g bc857bwt1g bc857cwt1g bc858awt1g bc858bwt1g.pdf pdf_icon

BC857CWT1G

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

 0.1. Size:81K  onsemi
nsvbc857cwt1g.pdf pdf_icon

BC857CWT1G

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

 0.2. Size:275K  lrc
lbc857cwt1g.pdf pdf_icon

BC857CWT1G

LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G General Purpose Transistors LBC857AWT1G, BWT1G CWT1G PNP Silicon LBC858AWT1G, BWT1G These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ S-LBC856AWT1G, BWT1G SC 70 which is designed for low power surface mount applications. S-LBC857AWT1G, BWT1G Features CWT1G We declare t

Otros transistores... BC857BWT1G , BC857CDW1T1G , BC857CLT1G , BC857CLT3G , BC857CM , BC857CMB , BC857CW-G , BC857CWR , S9014 , BC857LT1 , BC857M , BC857QAS , BC858ALT1G , BC858AW-G , BC858AWT1G , BC858BLT1G , BC858BLT3G .

 

 

 


 
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