BC857CWT1G. Аналоги и основные параметры

Наименование производителя: BC857CWT1G

Маркировка: 3G

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 100 MHz

Ёмкость коллекторного перехода (Cc): 4.5 pf

Статический коэффициент передачи тока (hFE): 420

Корпус транзистора: SOT323

 Аналоги (замена) для BC857CWT1G

- подборⓘ биполярного транзистора по параметрам

 

BC857CWT1G даташит

 ..1. Size:81K  onsemi
 bc857cwt1g bc857bwt1g.pdf pdf_icon

BC857CWT1G

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

 ..2. Size:78K  onsemi
 bc856bwt1g bc857bwt1g bc857cwt1g bc858awt1g bc858bwt1g.pdf pdf_icon

BC857CWT1G

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

 0.1. Size:81K  onsemi
 nsvbc857cwt1g.pdf pdf_icon

BC857CWT1G

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

 0.2. Size:275K  lrc
 lbc857cwt1g.pdf pdf_icon

BC857CWT1G

LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G General Purpose Transistors LBC857AWT1G, BWT1G CWT1G PNP Silicon LBC858AWT1G, BWT1G These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ S-LBC856AWT1G, BWT1G SC 70 which is designed for low power surface mount applications. S-LBC857AWT1G, BWT1G Features CWT1G We declare t

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: BC857BWT1G, BC857CDW1T1G, BC857CLT1G, BC857CLT3G, BC857CM, BC857CMB, BC857CW-G, BC857CWR, S9014, BC857LT1, BC857M, BC857QAS, BC858ALT1G, BC858AW-G, BC858AWT1G, BC858BLT1G, BC858BLT3G