Справочник транзисторов. BC857CWT1G

 

Биполярный транзистор BC857CWT1G Даташит. Аналоги


   Наименование производителя: BC857CWT1G
   Маркировка: 3G
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 4.5 pf
   Статический коэффициент передачи тока (hfe): 420
   Корпус транзистора: SOT323
 

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BC857CWT1G Datasheet (PDF)

 ..1. Size:81K  onsemi
 bc857cwt1g bc857bwt1g.pdf pdf_icon

BC857CWT1G

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

 ..2. Size:78K  onsemi
 bc856bwt1g bc857bwt1g bc857cwt1g bc858awt1g bc858bwt1g.pdf pdf_icon

BC857CWT1G

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

 0.1. Size:81K  onsemi
 nsvbc857cwt1g.pdf pdf_icon

BC857CWT1G

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

 0.2. Size:275K  lrc
 lbc857cwt1g.pdf pdf_icon

BC857CWT1G

LESHAN RADIO COMPANY, LTD.LBC856AWT1G, BWT1GGeneral Purpose TransistorsLBC857AWT1G, BWT1GCWT1GPNP SiliconLBC858AWT1G, BWT1GThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/S-LBC856AWT1G, BWT1GSC70 which is designed for low power surface mountapplications. S-LBC857AWT1G, BWT1GFeaturesCWT1GWe declare t

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Другие транзисторы... BC857BWT1G , BC857CDW1T1G , BC857CLT1G , BC857CLT3G , BC857CM , BC857CMB , BC857CW-G , BC857CWR , 2SC4793 , BC857LT1 , BC857M , BC857QAS , BC858ALT1G , BC858AW-G , BC858AWT1G , BC858BLT1G , BC858BLT3G .

History: MPSH34

 

 
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